Vishay Intertechnology, Inc. Single FETs, MOSFETs SI3456CDV-T1-E3

Description
N-Channel 30V 7.7A (Tc) 2W (Ta), 3.3W (Tc) Surface Mount 6-TSOP
Request a Quote Datasheet
Description
N-Channel 30V 7.7A (Tc) 2W (Ta), 3.3W (Tc) Surface Mount 6-TSOP
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SI3456CDV-T1-E3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI3456CDV-T1-E3-ND
Single FETs, MOSFETs SI3456CDV-T1-E3-ND
N-Channel 30V 7.7A (Tc) 2W (Ta), 3.3W (Tc) Surface Mount 6-TSOP

N-Channel 30V 7.7A (Tc) 2W (Ta), 3.3W (Tc) Surface Mount 6-TSOP

Buy Now Datasheet
Singapore
30V 7.7A MOSFET Transistor
278-SI3456CDV-T1-E3
30V 7.7A MOSFET Transistor 278-SI3456CDV-T1-E3
MOSFET N-CH 30V 7.7A 6TSOP Product overview: SI3456CDV-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 7.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 7.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI3456CDV-T1-E3 can be used for catalog matching and distributor lookup.

MOSFET N-CH 30V 7.7A 6TSOP Product overview: SI3456CDV-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 7.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 7.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI3456CDV-T1-E3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3456CDV-T1-E3 - 211629-SI3456CDV-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3456CDV-T1-E3
211629-SI3456CDV-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3456CDV-T1-E3 211629-SI3456CDV-T1-E3
Manufacturer: Vishay Win Source Part Number: 211629-SI3456CDV-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2W (Ta), 3.3W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-TSOP Dimension: SOT-23-6 Thin, TSOT-23-6 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 7.7A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 12nC @ 10V Max Input Capacitance: 460pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 34 mOhm @ 6.1A, 10V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 211629-SI3456CDV-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2W (Ta), 3.3W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 7.7A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 12nC @ 10V
Max Input Capacitance: 460pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 34 mOhm @ 6.1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI3456CDV-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI3456CDV-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI3456CDV-T1-E3
MOSFET N-CH 30V 7.7A 6TSOP

MOSFET N-CH 30V 7.7A 6TSOP

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SI3456CDV-T1-E3-ND 278-SI3456CDV-T1-E3 211629-SI3456CDV-T1-E3 SI3456CDV-T1-E3
Product Name Single FETs, MOSFETs 30V 7.7A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3456CDV-T1-E3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type SOT23; SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) SOT3; SOT23; 6-TSOP SOT23; SOT-23-6 Thin, TSOT-23-6
PD 2000 milliwatts 2000 to 3300 milliwatts
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