Manufacturer: Vishay
Win Source Part Number: 749193-SI3453DV-T1-G
Manufacturer Homepage: www.vishay.com
Reference case: SOT-163
Reference Date Code: 13+
Popularity: Low
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Sufficient
MOSFET P-CHANNEL 30V 3.4A 6TSOP
MOSFET -30V -3.4A 3W Product overview: SI3453DV-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -30V, -3.4A, 3W. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -30V, -3.4A, 3W, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI3453DV-T1-GE3 can be used for catalog matching and distributor lookup.
MOSFET -30V Vds 20V Vgs TSOP-6
MOSFET P-CHANNEL 30V 3.4A 6TSOP
| Win Source Electronics | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Utmel Electronic Limited | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 749193-SI3453DV-T1-GE3 | SI3453DV-T1-GE3 | 278-SI3453DV-T1-GE3 | 880-SI3453DV-T1-GE3 | SI3453DV-T1-GE3 | SI3453DV-T1-GE3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3453DV-T1-GE3 | Single FETs, MOSFETs | -30V -3.4A 3W MOSFET Transistor | MOSFET -30V -3.4A 3W | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; P-Channel | P-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON | ||||
| V(BR)DSS | 30 volts | 30 volts | ||||
| IDSS | 3400 milliamps | |||||
| PD | 3000 milliwatts | 3000 milliwatts | 3000 milliwatts |
