Vishay Precision Group Single FETs, MOSFETs SI3447CDV-T1-GE3

MOSFET P-CH 12V 7.8A 6TSOP

MOSFET P-CH 12V 7.8A 6TSOP Product overview: SI3447CDV-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 7.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 7.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI3447CDV-T1-GE3 can be used for catalog matching and distributor lookup.

Manufacturer: Vishay
Win Source Part Number: 115048-SI3447CDV-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2W (Ta), 3W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 7.8A (Tc)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 30nC @ 8V
Max Input Capacitance: 910pF @ 6V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 36 mOhm @ 6.3A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Limited

P-Channel 12V 7.8A (Tc) 2W (Ta), 3W (Tc) Surface Mount 6-TSOP