Vishay Precision Group Single FETs, MOSFETs SI3447CDV-T1-GE3

Description
P-Channel 12V 7.8A (Tc) 2W (Ta), 3W (Tc) Surface Mount 6-TSOP
Request a Quote Datasheet
Description
P-Channel 12V 7.8A (Tc) 2W (Ta), 3W (Tc) Surface Mount 6-TSOP
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SI3447CDV-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI3447CDV-T1-GE3TR-ND
Single FETs, MOSFETs SI3447CDV-T1-GE3TR-ND
P-Channel 12V 7.8A (Tc) 2W (Ta), 3W (Tc) Surface Mount 6-TSOP

P-Channel 12V 7.8A (Tc) 2W (Ta), 3W (Tc) Surface Mount 6-TSOP

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3447CDV-T1-GE3 - 115048-SI3447CDV-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3447CDV-T1-GE3
115048-SI3447CDV-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3447CDV-T1-GE3 115048-SI3447CDV-T1-GE3
Manufacturer: Vishay Win Source Part Number: 115048-SI3447CDV-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2W (Ta), 3W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-TSOP Dimension: SOT-23-6 Thin, TSOT-23-6 Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 7.8A (Tc) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 30nC @ 8V Max Input Capacitance: 910pF @ 6V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 36 mOhm @ 6.3A, 4.5V Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 115048-SI3447CDV-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2W (Ta), 3W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 7.8A (Tc)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 30nC @ 8V
Max Input Capacitance: 910pF @ 6V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 36 mOhm @ 6.3A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore
12V 7.8A MOSFET Transistor
278-SI3447CDV-T1-GE3
12V 7.8A MOSFET Transistor 278-SI3447CDV-T1-GE3
MOSFET P-CH 12V 7.8A 6TSOP Product overview: SI3447CDV-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 7.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 7.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI3447CDV-T1-GE3 can be used for catalog matching and distributor lookup.

MOSFET P-CH 12V 7.8A 6TSOP Product overview: SI3447CDV-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 7.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 7.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI3447CDV-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
MOSFET P-CH 12V 7.8A 6-TSOP - 880-SI3447CDV-T1-GE3 - Utmel Electronic Limited
Hong Kong, China
MOSFET P-CH 12V 7.8A 6-TSOP
880-SI3447CDV-T1-GE3
MOSFET P-CH 12V 7.8A 6-TSOP 880-SI3447CDV-T1-GE3
MOSFET P-CH 12V 7.8A 6-TSOP

MOSFET P-CH 12V 7.8A 6-TSOP

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI3447CDV-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI3447CDV-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI3447CDV-T1-GE3
MOSFET P-CH 12V 7.8A 6TSOP

MOSFET P-CH 12V 7.8A 6TSOP

Supplier's Site
Single FETs, MOSFETs - SI3447CDV-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI3447CDV-T1-GE3
Single FETs, MOSFETs SI3447CDV-T1-GE3
MOSFET P-CH 12V 7.8A 6TSOP

MOSFET P-CH 12V 7.8A 6TSOP

Supplier's Site Datasheet

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global)
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number SI3447CDV-T1-GE3TR-ND 115048-SI3447CDV-T1-GE3 278-SI3447CDV-T1-GE3 880-SI3447CDV-T1-GE3 SI3447CDV-T1-GE3 SI3447CDV-T1-GE3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3447CDV-T1-GE3 12V 7.8A MOSFET Transistor MOSFET P-CH 12V 7.8A 6-TSOP Discrete Semiconductor Products - Transistors - FETs, MOSFETs Single FETs, MOSFETs
Polarity P-Channel P-Channel; P-Channel P-Channel; P-Channel
Package Type SOT23; SOT-23-6 Thin, TSOT-23-6 SOT3; SOT23; 6-TSOP Tape & Reel (TR) SOT23; SOT-23-6 Thin, TSOT-23-6 SOT23; SOT-23-6 Thin, TSOT-23-6
V(BR)DSS 12 volts 12 volts
PD 2000 to 3000 milliwatts 2000 milliwatts 2000 milliwatts 2000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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