Si3443DDV Series 20 V 0.047 Ohm Surface Mount P-Channel MOSFET - TSOP-6 Product overview: SI3443DDV-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, SMD, 20 V, 0.047 Ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 20 V, 0.047 Ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI3443DDV-T1-GE3
P-Ch MOSFET TSOP-6 Cu 20V 47mohm @ 4.5V
P-Ch MOSFET TSOP-6 Cu 20V 47mohm @ 4.5V
P-Ch MOSFET TSOP-6 Cu 20V 47mohm @ 4.5V
P-Channel 20V 4A (Ta), 5.3A (Tc) 1.7W (Ta), 2.7W (Tc) Surface Mount 6-TSOP
P-Channel 20V 4A (Ta), 5.3A (Tc) 1.7W (Ta), 2.7W (Tc) Surface Mount 6-TSOP
P-Channel 20V 4A (Ta), 5.3A (Tc) 1.7W (Ta), 2.7W (Tc) Surface Mount 6-TSOP
Manufacturer: Vishay
Win Source Part Number: 1095828-SI3443DDV-T1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4A (Ta), 5.3A (Tc)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 30nC @ 8V
Max Input Capacitance: 970pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 47 mOhm @ 4.5A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Sufficient
MOSFET P-CH 20V 4A/5.3A 6TSOP
MOSFET, P-CH, 20V, 4A, 150DEG C, 2.7W ROHS COMPLIANT: YES
MOSFET P-CH 20V 4A/5.3A 6TSOP
MOSFET -20V Vds 12V Vgs TSOP-6
| ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SI3443DDV-T1-GE3 | 2567355P | SI3443DDV-T1-GE3DKR-ND | 1095828-SI3443DDV-T1-GE3 | SI3443DDV-T1-GE3 | 75AH9201 | SI3443DDV-T1-GE3 | SI3443DDV-T1-GE3 |
| Product Name | P-Channel SMD 20 V 0.047 Ohm MOSFET Transistor | MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3443DDV-T1-GE3 | Single FETs, MOSFETs | Mosfet, P-Ch, 20V, 4A, 150Deg C, 2.7W Rohs Compliant Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| PD | 2700 milliwatts | 1700 to 2700 milliwatts | 1700 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | TSOP-6 | SOT23; SOT-23-6 Thin, TSOT-23-6 | SOT3; SOT23; 6-TSOP | SOT23; SOT-23-6 Thin, TSOT-23-6 | TO-3 | SOT23; SOT-23-6 Thin, TSOT-23-6 | ||
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel; P-Channel |
