Vishay Intertechnology, Inc. MOSFET SI3443CVD-T1-E3

Description
MOSFET 20V 4.7A 3.2W
Description
MOSFET 20V 4.7A 3.2W
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P-Channel MOSFET with a 20 V drain-source voltage rating, designed for applications such as HDD, asynchronous rectification, and portable device load switches. Housed in a TSOP-6 package measuring 3 mm by 2.85 mm, it has a continuous drain current of -4.7 A at 25°C case temperature and a maximum power dissipation of 2 W under the same conditions. The drain-source on-state resistance is 0.060 Ω at -4.5 V gate-source voltage and 0.084 Ω at -2.7 V, with a total gate charge of 7.53 nC. The device is RoHS compliant and halogen-free according to IEC 61249-2-21, with an operating junction temperature range from -55°C to 150°C.

Datasheet Summary
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P-Channel MOSFET with a 20 V drain-source voltage rating, designed for applications such as HDD, asynchronous rectification, and portable device load switches. Housed in a TSOP-6 package measuring 3 mm by 2.85 mm, it has a continuous drain current of -4.7 A at 25°C case temperature and a maximum power dissipation of 2 W under the same conditions. The drain-source on-state resistance is 0.060 Ω at -4.5 V gate-source voltage and 0.084 Ω at -2.7 V, with a total gate charge of 7.53 nC. The device is RoHS compliant and halogen-free according to IEC 61249-2-21, with an operating junction temperature range from -55°C to 150°C.

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Sheung Wan, Hong Kong
MOSFET 20V 4.7A 3.2W

MOSFET 20V 4.7A 3.2W

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number SI3443CVD-T1-E3
Product Name MOSFET
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