MOSFET P-CH 20V 5.97A 6TSOP
Manufacturer: Vishay
Win Source Part Number: 064444-SI3443CDV-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2W (Ta), 3.2W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 5.97A (Tc)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 12.4nC @ 5V
Max Input Capacitance: 610pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 60 mOhm @ 4.7A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Balance
P-Channel 20V 5.97A (Tc) 2W (Ta), 3.2W (Tc) Surface Mount 6-TSOP
P-Channel 20V 5.97A (Tc) 2W (Ta), 3.2W (Tc) Surface Mount 6-TSOP
P-Channel 20V 5.97A (Tc) 2W (Ta), 3.2W (Tc) Surface Mount 6-TSOP
MOSFET -20V Vds 12V Vgs TSOP-6
MOSFET P-CH 20V 5.97A 6TSOP
P CHANNEL MOSFET; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:4.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:600mV; Power Dissipation:3.2W RoHS Compliant: Yes
P CHANNEL MOSFET, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:4.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:600mV RoHS Compliant: Yes
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI3443CDV-T1-E3 | 064444-SI3443CDV-T1-E3 | SI3443CDV-T1-E3DKR-ND | SI3443CDV-T1-E3 | SI3443CDV-T1-E3 | 12R3249 | 33P5193 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3443CDV-T1-E3 | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | P Channel Mosfet; Channel Type Vishay | P Channel Mosfet, Full Reel; Channel Type Vishay |
| Polarity | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 20 volts | 20 volts | |||||
| IDSS | 5970 milliamps | 4700 milliamps | 4700 milliamps |
