Vishay Precision Group Single FETs, MOSFETs SI3442BDV-T1-GE3

Description
N-Channel 20V 3A (Ta) 860mW (Ta) Surface Mount 6-TSOP
  • Single FETs, MOSFETs - SI3442BDV-T1-GE3-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3442BDV-T1-GE3 - 042592-SI3442BDV-T1-GE3 - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI3442BDV-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • N Channel Mosfet, 20V, 4.2A; Channel Type Vishay - 35R6210 - Newark, An Avnet Company
    Newark, An Avnet Company
  • N Channel Mosfet, 20V, 4.2A; Channel Type Vishay - 35R0035 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
N-Channel 20V 3A (Ta) 860mW (Ta) Surface Mount 6-TSOP
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SI3442BDV-T1-GE3-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI3442BDV-T1-GE3-ND
Single FETs, MOSFETs SI3442BDV-T1-GE3-ND
N-Channel 20V 3A (Ta) 860mW (Ta) Surface Mount 6-TSOP

N-Channel 20V 3A (Ta) 860mW (Ta) Surface Mount 6-TSOP

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3442BDV-T1-GE3 - 042592-SI3442BDV-T1-GE3 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3442BDV-T1-GE3
042592-SI3442BDV-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3442BDV-T1-GE3 042592-SI3442BDV-T1-GE3
Manufacturer: Vishay Win Source Part Number: 042592-SI3442BDV-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 860mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-TSOP Dimension: SOT-23-6 Thin, TSOT-23-6 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 3A (Ta) Gate-Source Threshold Voltage: 1.8V @ 250μA Max Gate Charge: 5nC @ 4.5V Max Input Capacitance: 295pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 57 mOhm @ 4A, 4.5V Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 042592-SI3442BDV-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 860mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 3A (Ta)
Gate-Source Threshold Voltage: 1.8V @ 250μA
Max Gate Charge: 5nC @ 4.5V
Max Input Capacitance: 295pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 57 mOhm @ 4A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI3442BDV-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI3442BDV-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI3442BDV-T1-GE3
MOSFET N-CH 20V 3A 6TSOP

MOSFET N-CH 20V 3A 6TSOP

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
SI3442BDV-T1-GE3
MOSFET SI3442BDV-T1-GE3
MOSFET 20V 4.2A 1.67W 57mohm @ 4.5V

MOSFET 20V 4.2A 1.67W 57mohm @ 4.5V

Buy Now Datasheet
N Channel Mosfet, 20V, 4.2A; Channel Type Vishay - 35R6210 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 20V, 4.2A; Channel Type Vishay
35R6210
N Channel Mosfet, 20V, 4.2A; Channel Type Vishay 35R6210
N CHANNEL MOSFET, 20V, 4.2A; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:4.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1.8V RoHS Compliant: Yes

N CHANNEL MOSFET, 20V, 4.2A; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:4.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1.8V RoHS Compliant: Yes

Supplier's Site
N Channel Mosfet, 20V, 4.2A; Channel Type Vishay - 35R0035 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 20V, 4.2A; Channel Type Vishay
35R0035
N Channel Mosfet, 20V, 4.2A; Channel Type Vishay 35R0035
N CHANNEL MOSFET, 20V, 4.2A; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:4.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1.8V RoHS Compliant: Yes

N CHANNEL MOSFET, 20V, 4.2A; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:4.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1.8V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number SI3442BDV-T1-GE3-ND 042592-SI3442BDV-T1-GE3 SI3442BDV-T1-GE3 SI3442BDV-T1-GE3 35R6210
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3442BDV-T1-GE3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET N Channel Mosfet, 20V, 4.2A; Channel Type Vishay
Polarity N-Channel N-Channel; N-Channel N-Channel
Package Type SOT23; SOT-23-6 Thin, TSOT-23-6 SOT3; SOT23; 6-TSOP SOT23; SOT-23-6 Thin, TSOT-23-6 TO-3
V(BR)DSS 20 volts
PD 860 milliwatts
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