Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3441BDV-T1-GE3 SI3441BDV-T1-GE3

Description
Manufacturer: Vishay Win Source Part Number: 1095826-SI3441BDV-T1 -GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 860mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-TSOP Dimension: SOT-23-6 Thin, TSOT-23-6 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 2.45A (Ta) Gate-Source Threshold Voltage: 850mV @ 250μA Max Gate Charge: 8nC @ 4.5V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 90 mOhm @ 3.3A, 4.5V Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Vishay Win Source Part Number: 1095826-SI3441BDV-T1 -GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 860mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-TSOP Dimension: SOT-23-6 Thin, TSOT-23-6 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 2.45A (Ta) Gate-Source Threshold Voltage: 850mV @ 250μA Max Gate Charge: 8nC @ 4.5V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 90 mOhm @ 3.3A, 4.5V Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Sufficient
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Suppliers

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3441BDV-T1-GE3 - 1095826-SI3441BDV-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3441BDV-T1-GE3
1095826-SI3441BDV-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3441BDV-T1-GE3 1095826-SI3441BDV-T1-GE3
Manufacturer: Vishay Win Source Part Number: 1095826-SI3441BDV-T1 -GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 860mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-TSOP Dimension: SOT-23-6 Thin, TSOT-23-6 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 2.45A (Ta) Gate-Source Threshold Voltage: 850mV @ 250μA Max Gate Charge: 8nC @ 4.5V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 90 mOhm @ 3.3A, 4.5V Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Sufficient

Manufacturer: Vishay
Win Source Part Number: 1095826-SI3441BDV-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 860mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 2.45A (Ta)
Gate-Source Threshold Voltage: 850mV @ 250μA
Max Gate Charge: 8nC @ 4.5V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 90 mOhm @ 3.3A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI3441BDV-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI3441BDV-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI3441BDV-T1-GE3
MOSFET P-CH 20V 2.45A 6TSOP

MOSFET P-CH 20V 2.45A 6TSOP

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1095826-SI3441BDV-T1-GE3 SI3441BDV-T1-GE3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3441BDV-T1-GE3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel
V(BR)DSS 20 volts
PD 860 milliwatts
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