Vishay Precision Group Single FETs, MOSFETs SI3440DV-T1-GE3

MOSFET N-CH 150V 1.2A 6TSOP

150V 1.5A N-Ch MOSFET, 375mR Rds On, TSOP, Surface Mount Product overview: SI3440DV-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 150V, 1.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 150V, 1.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI3440DV-T1-GE3 can be used for catalog matching and distributor lookup.

N-Channel 150V 1.2A (Ta) 1.14W (Ta) Surface Mount 6-TSOP

N-Channel 150V 1.2A (Ta) 1.14W (Ta) Surface Mount 6-TSOP

N-Channel 150V 1.2A (Ta) 1.14W (Ta) Surface Mount 6-TSOP

Manufacturer: Vishay
Win Source Part Number: 028422-SI3440DV-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.14W (Ta)
Family Name: Si3440DV
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 1.2A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 8nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 375 mOhm @ 1.5A, 10V
Alternative Parts (Cross-Reference): FDC2512_NL; FDC2512_Q; FDC2512_F095;
Introduction Date: September 10, 2003
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Balance