MOSFET N-CH 150V 1.2A 6TSOP
Manufacturer: Vishay
Win Source Part Number: 093876-SI3440DV-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.14W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 1.2A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 8nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 375 mOhm @ 1.5A, 10V
Alternative Parts (Cross-Reference): FDC2512_NL; FDC2512_Q; FDC2512_F095;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Limited
N-Channel 150V 1.2A (Ta) 1.14W (Ta) Surface Mount 6-TSOP
N-Channel 150V 1.2A (Ta) 1.14W (Ta) Surface Mount 6-TSOP
N-Channel 150V 1.2A (Ta) 1.14W (Ta) Surface Mount 6-TSOP
MOSFET, N CHANNEL, 150V, 1.2A, TSOP-6, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:1.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:1.14W RoHS Compliant: Yes
MOSFET, N-CH, 150V, 1.2A, TSOP-6; Transistor Polarity:N Channel; Continuous Drain Current Id:1.2A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.31ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
MOSFET 150V Vds 20V Vgs TSOP-6
MOSFET N-CH 150V 1.2A 6TSOP
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SI3440DV-T1-E3 | 093876-SI3440DV-T1-E3 | SI3440DV-T1-E3CT-ND | 29X0527 | 61AC1931 | SI3440DV-T1-E3 | SI3440DV-T1-E3 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3440DV-T1-E3 | Single FETs, MOSFETs | Mosfet, N Channel, 150V, 1.2A, Tsop-6, Full Reel; Channel Type Vishay | Mosfet, N-Ch, 150V, 1.2A, Tsop-6; Transistor Polarity Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 150 volts | 150 volts | |||||
| IDSS | 1200 milliamps | 1200 milliamps | 1200 milliamps | ||||
| PD | 1140 milliwatts | 1140 milliwatts | 1140 milliwatts |
