Vishay Precision Group MOSFETs SI3438DV-T1-GE3

P-Ch MOSFET TSOP-6 40V 355mohm @ 10V

P-Ch MOSFET TSOP-6 40V 355mohm @ 10V

P-Ch MOSFET TSOP-6 40V 355mohm @ 10V

N-CH MOSFET 40V 5.5A 35.5mR TSOP Product overview: SI3438DV-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 5.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 5.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI3438DV-T1-GE3 can be used for catalog matching and distributor lookup.

N-Channel 40V 7.4A (Tc) 2W (Ta), 3.5W (Tc) Surface Mount 6-TSOP

N-Channel 40V 7.4A (Tc) 2W (Ta), 3.5W (Tc) Surface Mount 6-TSOP

N-Channel 40V 7.4A (Tc) 2W (Ta), 3.5W (Tc) Surface Mount 6-TSOP

Manufacturer: Vishay
Win Source Part Number: 028421-SI3438DV-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2W (Ta), 3.5W (Tc)
Family Name: Si3438DV
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 7.4A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 20nC @ 10V
Max Input Capacitance: 640pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 35.5 mOhm @ 5A, 10V
Introduction Date: July 29, 2008
ECCN: EAR99
Estimated EOL Date: 2027
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Sufficient