Vishay Intertechnology, Inc. MOSFET SI3435DV-T1-GE3

Description
MOSFET 12V 6.3A 2.0W 36mohm @ 4.5V
Description
MOSFET 12V 6.3A 2.0W 36mohm @ 4.5V
Datasheet
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P-Channel MOSFET for 12 V drain-source operation in a TSOP-6 package measuring 3 mm by 2.85 mm, with a drain current rating of -6.3 A at -4.5 V gate-source voltage and a maximum on-state resistance of 0.036 Ω at -4.5 V gate-source voltage. compliant with RoHS Directive 2002/95/EC and halogen-free per IEC 61249-2-21.

Datasheet Summary
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P-Channel MOSFET for 12 V drain-source operation in a TSOP-6 package measuring 3 mm by 2.85 mm, with a drain current rating of -6.3 A at -4.5 V gate-source voltage and a maximum on-state resistance of 0.036 Ω at -4.5 V gate-source voltage. compliant with RoHS Directive 2002/95/EC and halogen-free per IEC 61249-2-21.

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Sheung Wan, Hong Kong
MOSFET 12V 6.3A 2.0W 36mohm @ 4.5V

MOSFET 12V 6.3A 2.0W 36mohm @ 4.5V

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number SI3435DV-T1-GE3
Product Name MOSFET
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