Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3435DV-T1-E3 SI3435DV-T1-E3

Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1092821-SI3435DV-T1- E3 Mounting: SMD (SMT) Drain to Source Voltage (Vdss): -12 V Power Dissipation: 1.1 W Rise Time: 45 ns Fall Time: 45 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: TSOP Popularity: Low Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C RoHS: Compliant Min Operating Temperature: -55 °C Element Configuration: Single Max Power Dissipation: 1.1 W Continuous Drain Current (ID): 4.8 A Turn-Off Delay Time: 90 ns Drain to Source Resistance: 73 mΩ Gate to Source Voltage (Vgs): 8 V