MOSFET N-CH 100V 1.8A 6TSOP
MOSFET N-CH 100V 1.8A 6TSOP Product overview: SI3430DV-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 1.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 1.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI3430DV-T1-GE3 can be used for catalog matching and distributor lookup.
N-Channel 100V 1.8A (Ta) 1.14W (Ta) Surface Mount 6-TSOP
N-Channel 100V 1.8A (Ta) 1.14W (Ta) Surface Mount 6-TSOP
N-Channel 100V 1.8A (Ta) 1.14W (Ta) Surface Mount 6-TSOP
Manufacturer: Vishay
Win Source Part Number: 028418-SI3430DV-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.14W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 1.8A (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA (Min)
Max Gate Charge: 6.6nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 170 mOhm @ 2.4A, 10V
Alternative Parts (Cross-Reference): Si3430DV; Si3430DV-T1; Si3430DV-T1-E3;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance
MOSFET N-CH 100V 1.8A 6TSOP
MOSFET 100V 2.4A 2.0W 170mohm @ 10V
N CH MOSFET; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:2.4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Power Dissipation:2W RoHS Compliant: Yes
N CHANNEL MOSFET, 100V, 2.4A, TSOP-6; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:2.4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Utmel Electronic Limited | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI3430DV-T1-GE3 | 278-SI3430DV-T1-GE3 | SI3430DV-T1-GE3CT-ND | 028418-SI3430DV-T1-GE3 | SI3430DV-T1-GE3 | SI3430DV-T1-GE3 | 17930-SI3430DV-T1-GE3 | 15R4923 | 26R1863 |
| Product Name | Single FETs, MOSFETs | 100V 1.8A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3430DV-T1-GE3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | TSOP-6 MOSFETs ROHS | N Ch Mosfet; Channel Type Vishay | N Channel Mosfet, 100V, 2.4A, Tsop-6; Channel Type Vishay |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||
| V(BR)DSS | 100 volts | 100 volts | |||||||
| IDSS | 1800 milliamps | 2400 milliamps | 2400 milliamps | ||||||
| PD | 1140 milliwatts | 2 milliwatts | 1140 milliwatts | 2000 milliwatts |
