The Vishay N-Channel MOSFET, part number 06J7594, features a maximum drain-source voltage (Vds) of 100 V and a continuous drain current (Id) rating of 2.4 A at a junction temperature of 175 ¬8C. The on-state resistance (Rds(on)) is specified at 0.170 Oc when the gate-source voltage (Vgs) is 10 V and 0.185 Oc at 6 V. This device is optimized for high-efficiency PWM applications and is 100% Rg tested. The MOSFET has a gate threshold voltage (Vgs(th)) ranging from 2 V to 4.2 V and a maximum power dissipation of 2 W at 25 ¬8C. It operates within a temperature range of -55 ¬8C to 150 ¬8C. The device is available in a TSOP-6 package and is compliant with RoHS standards. Engineers should consider this MOSFET for applications requiring reliable performance under specified voltage and current conditions, particularly in PWM circuits.
N-Channel 100V 1.8A (Ta) 1.14W (Ta) Surface Mount 6-TSOP
N-Channel 100V 1.8A (Ta) 1.14W (Ta) Surface Mount 6-TSOP
N-Channel 100V 1.8A (Ta) 1.14W (Ta) Surface Mount 6-TSOP
N-CH MOSFET 100V 1.8A 170mR TSOP Surface Mount Product overview: SI3430DV-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 100V, 1.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 100V, 1.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI3430DV-T1-E3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 1095824-SI3430DV-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.14W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 1.8A (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA (Min)
Max Gate Charge: 6.6nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 170 mOhm @ 2.4A, 10V
Alternative Parts (Cross-Reference): SI3430DV-T1-GE3; Si3430DV; Si3430DV-T1; Si3430DV-T1-E3;
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Balance
N CHANNEL MOSFET; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:1.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Power Dissipation:1.14W RoHS Compliant: Yes
N CHANNEL MOSFET, 100V, 1.8A, TSOP, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:1.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2VRoHS Compliant: Yes
MOSFET N-CH 100V 1.8A 6TSOP
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SI3430DV-T1-E3CT-ND | 278-SI3430DV-T1-E3 | 1095824-SI3430DV-T1-E3 | 06J7594 | 65K1923 | SI3430DV-T1-E3 | SI3430DV-T1-E3 |
| Product Name | Single FETs, MOSFETs | SMD 100V 1.8A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3430DV-T1-E3 | N Channel Mosfet; Channel Type Vishay | N Channel Mosfet, 100V, 1.8A, Tsop, Full Reel; Channel Type Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||
| Package Type | SOT23; SOT-23-6 Thin, TSOT-23-6 | SOT3; SOT23; 6-TSOP | TO-3 | TO-3 | SOT23; SOT-23-6 Thin, TSOT-23-6 | ||
| PD | 1140 milliwatts | 1140 milliwatts | 1140 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |
