The Vishay N-Channel MOSFET, part number 06J7594, features a maximum drain-source voltage (Vds) of 100 V and a continuous drain current (Id) rating of 2.4 A at a junction temperature of 175 ¬8C. The on-state resistance (Rds(on)) is specified at 0.170 Oc when the gate-source voltage (Vgs) is 10 V and 0.185 Oc at 6 V. This device is optimized for high-efficiency PWM applications and is 100% Rg tested. The MOSFET has a gate threshold voltage (Vgs(th)) ranging from 2 V to 4.2 V and a maximum power dissipation of 2 W at 25 ¬8C. It operates within a temperature range of -55 ¬8C to 150 ¬8C. The device is available in a TSOP-6 package and is compliant with RoHS standards. Engineers should consider this MOSFET for applications requiring reliable performance under specified voltage and current conditions, particularly in PWM circuits.
Manufacturer: Vishay
Win Source Part Number: 1095824-SI3430DV-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.14W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 1.8A (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA (Min)
Max Gate Charge: 6.6nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 170 mOhm @ 2.4A, 10V
Alternative Parts (Cross-Reference): SI3430DV-T1-GE3; Si3430DV; Si3430DV-T1; Si3430DV-T1-E3;
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Balance
N-Channel 100V 1.8A (Ta) 1.14W (Ta) Surface Mount 6-TSOP
N-Channel 100V 1.8A (Ta) 1.14W (Ta) Surface Mount 6-TSOP
N-Channel 100V 1.8A (Ta) 1.14W (Ta) Surface Mount 6-TSOP
MOSFET N-CH 100V 1.8A 6TSOP
N CHANNEL MOSFET; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:1.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Power Dissipation:1.14W RoHS Compliant: Yes
N CHANNEL MOSFET, 100V, 1.8A, TSOP, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:1.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2VRoHS Compliant: Yes
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1095824-SI3430DV-T1-E3 | SI3430DV-T1-E3CT-ND | SI3430DV-T1-E3 | SI3430DV-T1-E3 | 06J7594 | 65K1923 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3430DV-T1-E3 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | N Channel Mosfet; Channel Type Vishay | N Channel Mosfet, 100V, 1.8A, Tsop, Full Reel; Channel Type Vishay |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | ||
| V(BR)DSS | 100 volts | |||||
| PD | 1140 milliwatts | 1140 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) |
