Vishay Intertechnology, Inc. Single FETs, MOSFETs SI3425DV-T1-GE3

P-channel 20 V (D-S) MOSFET in a TSOP-6 package, designed for load switches, DC/DC converters, and power management applications. The device has a maximum on-state resistance of 0.028 Ω at VGS = -10 V and 0.035 Ω at VGS = -4.5 V, with a continuous drain current rating of -8 A at 25 °C and -6.8 A at 70 °C. It supports a peak pulsed drain current of -30 A and has a total gate charge of 7.0 nC. The junction and storage temperature range is -55 °C to +150 °C. The part is lead-free, halogen-free, and meets RoHS standards. Thermal resistance is 41 °C/W junction-to-foot and 62.5 °C/W junction-to-ambient under steady-state conditions.