Manufacturer: Vishay
Win Source Part Number: 028417-SI3424BDV-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.1W (Ta), 2.98W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 8A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 19.6nC @ 10V
Max Input Capacitance: 735pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 28 mOhm @ 7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance
N-Channel 30V 8A (Tc) 2.1W (Ta), 2.98W (Tc) Surface Mount 6-TSOP
N-Channel 30V 8A (Tc) 2.1W (Ta), 2.98W (Tc) Surface Mount 6-TSOP
N-Channel 30V 8A (Tc) 2.1W (Ta), 2.98W (Tc) Surface Mount 6-TSOP
MOSFET N-CH 30V 8A 6TSOP
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 028417-SI3424BDV-T1-GE3 | SI3424BDV-T1-GE3TR-ND | SI3424BDV-T1-GE3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3424BDV-T1-GE3 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | |
| V(BR)DSS | 30 volts | ||
| PD | 2100 to 2980 milliwatts |
