Small Signal Field-Effect Transistor, 8A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA, HALOGEN FREE AND ROHS COMPLIANT, MO-193C, TSOP-6 Product overview: SI3417DV-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 8A, 30V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 8A, 30V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI3417DV-T1-GE3 can be used for catalog matching and distributor lookup.
P-Channel 30V 8A (Ta) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP
P-Channel 30V 8A (Ta) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP
P-Channel 30V 8A (Ta) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP
Manufacturer: Vishay
Win Source Part Number: 1095820-SI3417DV-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 8A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 50nC @ 10V
Max Input Capacitance: 1350pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 25.2 mOhm @ 7.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management, Alternative Energy, Motor Drive & Control, Industrial
MOSFET P-CH 30V 8A 6TSOP
TSOP-6-1.5mm MOSFETs ROHS
MOSFET, P-CH, 30V, 8A, TSOP ROHS COMPLIANT: YES
MOSFET P-CH 30V 8A 6TSOP
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | LCSC Electronics Technology (HK) Limited | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-SI3417DV-T1-GE3 | SI3417DV-T1-GE3CT-ND | 1095820-SI3417DV-T1-GE3 | SI3417DV-T1-GE3 | SI3417DV-T1-GE3 | 57AJ0432 | SI3417DV-T1-GE3 |
| Product Name | P-Channel 8A 30V MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3417DV-T1-GE3 | Single FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs | Mosfet, P-Ch, 30V, 8A, Tsop Rohs Compliant Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel; P-Channel | |||
| PD | 4200 milliwatts | 2000 to 4200 milliwatts | 2000 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | SOT23; SOT-23-6 Thin, TSOT-23-6 | SOT3; SOT23; 6-TSOP | SOT23; SOT-23-6 Thin, TSOT-23-6 | TO-3 | SOT23; SOT-23-6 Thin, TSOT-23-6 |
