Vishay Intertechnology, Inc. Single FETs, MOSFETs SI3417DV-T1-GE3

Description
P-Channel 30V 8A (Ta) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP
Request a Quote Datasheet
Description
P-Channel 30V 8A (Ta) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SI3417DV-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI3417DV-T1-GE3CT-ND
Single FETs, MOSFETs SI3417DV-T1-GE3CT-ND
P-Channel 30V 8A (Ta) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP

P-Channel 30V 8A (Ta) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP

Buy Now Datasheet
Single FETs, MOSFETs - SI3417DV-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI3417DV-T1-GE3DKR-ND
Single FETs, MOSFETs SI3417DV-T1-GE3DKR-ND
P-Channel 30V 8A (Ta) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP

P-Channel 30V 8A (Ta) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP

Buy Now Datasheet
Single FETs, MOSFETs - SI3417DV-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI3417DV-T1-GE3TR-ND
Single FETs, MOSFETs SI3417DV-T1-GE3TR-ND
P-Channel 30V 8A (Ta) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP

P-Channel 30V 8A (Ta) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP

Buy Now Datasheet
Single FETs, MOSFETs - SI3417DV-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI3417DV-T1-GE3
Single FETs, MOSFETs SI3417DV-T1-GE3
MOSFET P-CH 30V 8A 6TSOP

MOSFET P-CH 30V 8A 6TSOP

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3417DV-T1-GE3 - 1095820-SI3417DV-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3417DV-T1-GE3
1095820-SI3417DV-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3417DV-T1-GE3 1095820-SI3417DV-T1-GE3
Manufacturer: Vishay Win Source Part Number: 1095820-SI3417DV-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2W (Ta), 4.2W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-TSOP Dimension: SOT-23-6 Thin, TSOT-23-6 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 8A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 50nC @ 10V Max Input Capacitance: 1350pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 25.2 mOhm @ 7.3A, 10V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Sufficient Application Field: Used in Power Management, Alternative Energy, Motor Drive & Control, Industrial

Manufacturer: Vishay
Win Source Part Number: 1095820-SI3417DV-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 8A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 50nC @ 10V
Max Input Capacitance: 1350pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 25.2 mOhm @ 7.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management, Alternative Energy, Motor Drive & Control, Industrial

Buy Now Datasheet
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
SI3417DV-T1-GE3
Triode/MOS Tube/Transistor >> MOSFETs SI3417DV-T1-GE3
TSOP-6-1.5mm MOSFETs ROHS

TSOP-6-1.5mm MOSFETs ROHS

Supplier's Site Datasheet
Mosfet, P-Ch, 30V, 8A, Tsop Rohs Compliant Vishay - 57AJ0432 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, 30V, 8A, Tsop Rohs Compliant Vishay
57AJ0432
Mosfet, P-Ch, 30V, 8A, Tsop Rohs Compliant Vishay 57AJ0432
MOSFET, P-CH, 30V, 8A, TSOP ROHS COMPLIANT: YES

MOSFET, P-CH, 30V, 8A, TSOP ROHS COMPLIANT: YES

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI3417DV-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI3417DV-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI3417DV-T1-GE3
MOSFET P-CH 30V 8A 6TSOP

MOSFET P-CH 30V 8A 6TSOP

Supplier's Site

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics LCSC Electronics Technology (HK) Limited Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SI3417DV-T1-GE3CT-ND SI3417DV-T1-GE3 1095820-SI3417DV-T1-GE3 SI3417DV-T1-GE3 57AJ0432 SI3417DV-T1-GE3
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3417DV-T1-GE3 Triode/MOS Tube/Transistor >> MOSFETs Mosfet, P-Ch, 30V, 8A, Tsop Rohs Compliant Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; P-Channel P-Channel; P-Channel
Package Type SOT23; SOT-23-6 Thin, TSOT-23-6 SOT23; SOT-23-6 Thin, TSOT-23-6 SOT3; SOT23; 6-TSOP TO-3 SOT23; SOT-23-6 Thin, TSOT-23-6
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 30 volts 30 volts
Unlock Full Specs
to access all available technical data