Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3417DV-T1-GE3 SI3417DV-T1-GE3

Manufacturer: Vishay
Win Source Part Number: 1095820-SI3417DV-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 8A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 50nC @ 10V
Max Input Capacitance: 1350pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 25.2 mOhm @ 7.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management, Alternative Energy, Motor Drive & Control, Industrial

P-Channel 30V 8A (Ta) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP

P-Channel 30V 8A (Ta) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP

P-Channel 30V 8A (Ta) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP

MOSFET P-CH 30V 8A 6TSOP