Vishay Precision Group Single FETs, MOSFETs SI3410DV-T1-GE3

Description
N-Channel 30V 8A (Tc) 2W (Ta), 4.1W (Tc) Surface Mount 6-TSOP
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Description
N-Channel 30V 8A (Tc) 2W (Ta), 4.1W (Tc) Surface Mount 6-TSOP
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SI3410DV-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI3410DV-T1-GE3CT-ND
Single FETs, MOSFETs SI3410DV-T1-GE3CT-ND
N-Channel 30V 8A (Tc) 2W (Ta), 4.1W (Tc) Surface Mount 6-TSOP

N-Channel 30V 8A (Tc) 2W (Ta), 4.1W (Tc) Surface Mount 6-TSOP

Buy Now Datasheet
Single FETs, MOSFETs - SI3410DV-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI3410DV-T1-GE3TR-ND
Single FETs, MOSFETs SI3410DV-T1-GE3TR-ND
N-Channel 30V 8A (Tc) 2W (Ta), 4.1W (Tc) Surface Mount 6-TSOP

N-Channel 30V 8A (Tc) 2W (Ta), 4.1W (Tc) Surface Mount 6-TSOP

Buy Now Datasheet
Single FETs, MOSFETs - SI3410DV-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI3410DV-T1-GE3DKR-ND
Single FETs, MOSFETs SI3410DV-T1-GE3DKR-ND
N-Channel 30V 8A (Tc) 2W (Ta), 4.1W (Tc) Surface Mount 6-TSOP

N-Channel 30V 8A (Tc) 2W (Ta), 4.1W (Tc) Surface Mount 6-TSOP

Buy Now Datasheet
Single FETs, MOSFETs - SI3410DV-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI3410DV-T1-GE3
Single FETs, MOSFETs SI3410DV-T1-GE3
MOSFET N-CH 30V 8A 6TSOP

MOSFET N-CH 30V 8A 6TSOP

Supplier's Site Datasheet
Singapore
N-Channel 30V 8A MOSFET Transistor
278-SI3410DV-T1-GE3
N-Channel 30V 8A MOSFET Transistor 278-SI3410DV-T1-GE3
N-Channel Power MOSFET, 30V, 8A, 19.5mR, TSOP Product overview: SI3410DV-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30V, 8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI3410DV-T1-GE3 can be used for catalog matching and distributor lookup.

N-Channel Power MOSFET, 30V, 8A, 19.5mR, TSOP Product overview: SI3410DV-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30V, 8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI3410DV-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3410DV-T1-GE3 - 064438-SI3410DV-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3410DV-T1-GE3
064438-SI3410DV-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3410DV-T1-GE3 064438-SI3410DV-T1-GE3
Manufacturer: Vishay Win Source Part Number: 064438-SI3410DV-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2W (Ta), 4.1W (Tc) Family Name: Si3410DV Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-TSOP Dimension: SOT-23-6 Thin, TSOT-23-6 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 8A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 33nC @ 10V Max Input Capacitance: 1295pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 19.5 mOhm @ 5A, 10V Alternative Parts (Cross-Reference): BSL302SNH6327XTSA1; PMN25EN,115; BSL302SNL6327XT; BSL302SN; Introduction Date: October 16, 2007 ECCN: EAR99 Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 064438-SI3410DV-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2W (Ta), 4.1W (Tc)
Family Name: Si3410DV
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 8A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 33nC @ 10V
Max Input Capacitance: 1295pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 19.5 mOhm @ 5A, 10V
Alternative Parts (Cross-Reference): BSL302SNH6327XTSA1; PMN25EN,115; BSL302SNL6327XT; BSL302SN;
Introduction Date: October 16, 2007
ECCN: EAR99
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET 30V Vds 20V Vgs TSOP-6

MOSFET 30V Vds 20V Vgs TSOP-6

Buy Now Datasheet
Mosfet, N-Ch, 30V, 8A, Tsop-6; Transistor Polarity Vishay - 97Y9498 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 30V, 8A, Tsop-6; Transistor Polarity Vishay
97Y9498
Mosfet, N-Ch, 30V, 8A, Tsop-6; Transistor Polarity Vishay 97Y9498
MOSFET, N-CH, 30V, 8A, TSOP-6; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.016ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation RoHS Compliant: Yes

MOSFET, N-CH, 30V, 8A, TSOP-6; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.016ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation RoHS Compliant: Yes

Supplier's Site Datasheet
N Channel Mosfet, 30V, 8A, Tsop; Channel Type Vishay - 35R0033 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 30V, 8A, Tsop; Channel Type Vishay
35R0033
N Channel Mosfet, 30V, 8A, Tsop; Channel Type Vishay 35R0033
N CHANNEL MOSFET, 30V, 8A, TSOP; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Product Range:-RoHS Compliant: Yes

N CHANNEL MOSFET, 30V, 8A, TSOP; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Product Range:-RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI3410DV-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI3410DV-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI3410DV-T1-GE3
MOSFET N-CH 30V 8A 6TSOP

MOSFET N-CH 30V 8A 6TSOP

Supplier's Site

Technical Specifications

  DigiKey ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Win Source Electronics VAST STOCK CO., LIMITED Newark, An Avnet Company Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SI3410DV-T1-GE3CT-ND SI3410DV-T1-GE3 278-SI3410DV-T1-GE3 064438-SI3410DV-T1-GE3 SI3410DV-T1-GE3 97Y9498 35R0033 SI3410DV-T1-GE3
Product Name Single FETs, MOSFETs Single FETs, MOSFETs N-Channel 30V 8A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3410DV-T1-GE3 MOSFET Mosfet, N-Ch, 30V, 8A, Tsop-6; Transistor Polarity Vishay N Channel Mosfet, 30V, 8A, Tsop; Channel Type Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel
Package Type SOT23; SOT-23-6 Thin, TSOT-23-6 SOT23; SOT-23-6 Thin, TSOT-23-6 SOT3; SOT23; 6-TSOP TO-3 TO-3 Surface Mount
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 30 volts 30 volts
IDSS 8000 milliamps 8000 milliamps 8000 milliamps
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