P-Channel 20V 8A (Tc) 4.2W (Tc) Surface Mount 6-TSOP
P-Channel 20V 8A (Tc) 4.2W (Tc) Surface Mount 6-TSOP
P-Channel 20V 8A (Tc) 4.2W (Tc) Surface Mount 6-TSOP
P-CH JFET -20V, 7.5A, 24mR Rds On, TSOP Product overview: SI3407DV-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -20V, 7.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -20V, 7.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI3407DV-T1-GE3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 1095817-SI3407DV-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 8A (Tc)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 63nC @ 10V
Max Input Capacitance: 1670pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 24 mOhm @ 7.5A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Balance
P CHANNEL MOSFET, -20V, -8A, TSOP-6, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Power Dissipation:2W; Product Range:-RoHS Compliant: Yes
P CHANNEL MOSFET, -20V, -8A, TSOP-6; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1.5V RoHS Compliant: Yes
MOSFET P-CH 20V 8A 6TSOP
MOSFET -20V Vds 12V Vgs TSOP-6
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI3407DV-T1-GE3CT-ND | 278-SI3407DV-T1-GE3 | 1095817-SI3407DV-T1-GE3 | 35R0032 | 35R6207 | SI3407DV-T1-GE3 | SI3407DV-T1-GE3 |
| Product Name | Single FETs, MOSFETs | -20V 7.5A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3407DV-T1-GE3 | P Channel Mosfet, -20V, -8A, Tsop-6, Full Reel; Channel Type Vishay | P Channel Mosfet, -20V, -8A, Tsop-6; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | ||
| Package Type | SOT23; SOT-23-6 Thin, TSOT-23-6 | SOT3; SOT23; 6-TSOP | TO-3 | TO-3 | Surface Mount | ||
| PD | 4200 milliwatts | 2000 to 4200 milliwatts | 2000 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |
