Trans MOSFET P-CH 80V 3.8A 6-Pin TSOP T/R Product overview: SI3129DV-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 3.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 3.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI3129DV-T1-GE3 can be used for catalog matching and distributor lookup.
P-Channel 80V 3.8A (Ta), 5.4A (Tc) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP
P-Channel 80V 3.8A (Ta), 5.4A (Tc) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP
P-Channel 80V 3.8A (Ta), 5.4A (Tc) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP
Manufacturer: Vishay Siliconix
Category: Discrete Semiconductor Products- Transistors -FETs, MOSFETs -Single FETs, MOSFETs
Series: TrenchFET®
Package: Tape & Reel (TR) /Cut Tape (CT)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 82.7mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Input Capacitance (Ciss) @ Vds: 805 pF @ 40 V
P-CHANNEL 80 V (D-S) MOSFET TSOP
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-SI3129DV-T1-GE3 | 742-SI3129DV-T1-GE3TR-ND | SI3129DV-T1-GE3 | |
| Product Name | 80V 3.8A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products- Transistors -FETs, MOSFETs -Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | |||
| V(BR)DSS | 80 volts | |||
| PD | 2000 milliwatts | |||
| TJ | -55 C (-67 F) |