Manufacturer: Vishay
Win Source Part Number: 1095785-SI3127DV-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 3.5A (Ta), 13A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 30nC @ 10V
Max Input Capacitance: 833pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 89 mOhm @ 1.5A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Sufficient
Small Signal Field-Effect Transistor, 5.1A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA, HALOGEN FREE AND ROHS COMPLIANT, MO-193C, TSOP-6 Product overview: SI3127DV-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 5.1A, 60V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 5.1A, 60V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI3127DV-T1-GE3 can be used for catalog matching and distributor lookup.
P-Channel 60V 3.5A (Ta), 13A (Tc) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP
P-Channel 60V 3.5A (Ta), 13A (Tc) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP
P-Channel 60V 3.5A (Ta), 13A (Tc) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP
MOSFET P-CH 60V 3.5A/13A 6TSOP
MOSFET, P-CH, 60V, 5.1A, 150DEG C, 4.2W ROHS COMPLIANT: YES
P-CHANNEL 60-V (D-S) MOSFET
MOSFET P-CH 60V 3.5A/13A 6TSOP
MOSFET -60V Vds 20V Vgs TSOP-6
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1095785-SI3127DV-T1-GE3 | 278-SI3127DV-T1-GE3 | SI3127DV-T1-GE3CT-ND | SI3127DV-T1-GE3 | 75AH9200 | 26AK9918 | SI3127DV-T1-GE3 | SI3127DV-T1-GE3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3127DV-T1-GE3 | P-Channel 5.1A 60V MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, P-Ch, 60V, 5.1A, 150Deg C, 4.2W Rohs Compliant Vishay | P-Channel 60-V (D-S) Mosfet Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | ||||
| V(BR)DSS | 60 volts | 60 volts | ||||||
| PD | 2000 to 4200 milliwatts | 4200 milliwatts | 2000 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |
