MOSFET P-CH 20V 6A SOT23-3
P-CH MOSFET 20V -6A SOT-23 28mR TrenchFET Product overview: SI2399DS-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, -6A, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, -6A, SOT-23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2399DS-T1-GE3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 211612-SI2399DS-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 6A (Tc)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 20nC @ 4.5V
Max Input Capacitance: 835pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 34 mOhm @ 5.1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Limited
P-Channel 20V 6A (Tc) 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)
P-Channel 20V 6A (Tc) 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)
P-Channel 20V 6A (Tc) 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)
P-Ch MOSFET SOT-23 20V 45mohm @ 4.5V
P-Ch MOSFET SOT-23 20V 45mohm @ 4.5V
MOSFET P-CH 20V 6A SOT23-3
VISHAY - SI2399DS-T1-GE3 - Leistungs-MOSFET, p-Kanal, 20 V, 6 A, 0.028 ohm, TO-236, Oberflächenmontage
MOSFET, P CHANNEL, -20V, -6A, SOT-23-3; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:600mV RoHS Compliant: Yes
P-CHANNEL 20-V (D-S) MOSFET
MOSFET -20V Vds 12V Vgs SOT-23
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | RS Components, Ltd. | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI2399DS-T1-GE3 | 278-SI2399DS-T1-GE3 | 211612-SI2399DS-T1-GE3 | SI2399DS-T1-GE3TR-ND | 1807277 | SI2399DS-T1-GE3 | 880-SI2399DS-T1-GE3 | 64T4058 | 26AK9917 | SI2399DS-T1-GE3 |
| Product Name | Single FETs, MOSFETs | 20V -6A SOT-23 MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2399DS-T1-GE3 | Single FETs, MOSFETs | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | VISHAY - SI2399DS-T1-GE3 - Leistungs-MOSFET, p-Kanal, 20 V, 6 A, 0.028 ohm, TO-236, Oberflächenmontage | Mosfet, P Channel, -20V, -6A, Sot-23-3; Channel Type Vishay | P-Channel 20-V (D-S) Mosfet Vishay | MOSFET |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON | ||||||||
| V(BR)DSS | 20 volts | 20 volts | -20 volts | |||||||
| IDSS | 6000 milliamps | 6000 milliamps | ||||||||
| PD | 2500 milliwatts | 2500 milliwatts | 1250 to 2500 milliwatts | 2500 milliwatts |
