Vishay Intertechnology, Inc. 100V 3.1A SOT-23 MOSFET Transistor SI2392DS-T1-GE3

MOSFET N-CH 100V 3.1A SOT-23 Product overview: SI2392DS-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 3.1A, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 3.1A, SOT-23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2392DS-T1-GE3 can be used for catalog matching and distributor lookup.

N-Channel 100V 3.1A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23

Manufacturer: Vishay
Win Source Part Number: 1095762-SI2392DS-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 3.1A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 10.4nC @ 10V
Max Input Capacitance: 196pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 126 mOhm @ 2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Balance