Vishay Precision Group N-Channel 3.1A 100V MOSFET Transistor SI2392ADS-T1-GE3

Description
Small Signal Field-Effect Transistor, 3.1A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN Product overview: SI2392ADS-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 3.1A, 100V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 3.1A, 100V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2392ADS-T1-GE3 can be used for catalog matching and distributor lookup.
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Description
Small Signal Field-Effect Transistor, 3.1A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN Product overview: SI2392ADS-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 3.1A, 100V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 3.1A, 100V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2392ADS-T1-GE3 can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore
N-Channel 3.1A 100V MOSFET Transistor
278-SI2392ADS-T1-GE3
N-Channel 3.1A 100V MOSFET Transistor 278-SI2392ADS-T1-GE3
Small Signal Field-Effect Transistor, 3.1A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN Product overview: SI2392ADS-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 3.1A, 100V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 3.1A, 100V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2392ADS-T1-GE3 can be used for catalog matching and distributor lookup.

Small Signal Field-Effect Transistor, 3.1A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN Product overview: SI2392ADS-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 3.1A, 100V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 3.1A, 100V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2392ADS-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - SI2392ADS-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI2392ADS-T1-GE3CT-ND
Single FETs, MOSFETs SI2392ADS-T1-GE3CT-ND
N-Channel 100V 3.1A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)

N-Channel 100V 3.1A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Single FETs, MOSFETs - SI2392ADS-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI2392ADS-T1-GE3DKR-ND
Single FETs, MOSFETs SI2392ADS-T1-GE3DKR-ND
N-Channel 100V 3.1A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)

N-Channel 100V 3.1A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Single FETs, MOSFETs - SI2392ADS-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI2392ADS-T1-GE3TR-ND
Single FETs, MOSFETs SI2392ADS-T1-GE3TR-ND
N-Channel 100V 3.1A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)

N-Channel 100V 3.1A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2392ADS-T1-GE3 - 1095761-SI2392ADS-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2392ADS-T1-GE3
1095761-SI2392ADS-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2392ADS-T1-GE3 1095761-SI2392ADS-T1-GE3
Manufacturer: Vishay Win Source Part Number: 1095761-SI2392ADS-T1 -GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc) Family Name: Si2392ADS Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 3.1A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 10.4nC @ 10V Max Input Capacitance: 196pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 126 mOhm @ 2A, 10V Alternative Parts (Cross-Reference): FDN8601; ECCN: EAR99 Estimated EOL Date: 2026 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Sufficient

Manufacturer: Vishay
Win Source Part Number: 1095761-SI2392ADS-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Family Name: Si2392ADS
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 3.1A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 10.4nC @ 10V
Max Input Capacitance: 196pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 126 mOhm @ 2A, 10V
Alternative Parts (Cross-Reference): FDN8601;
ECCN: EAR99
Estimated EOL Date: 2026
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - SI2392ADS-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI2392ADS-T1-GE3
Single FETs, MOSFETs SI2392ADS-T1-GE3
MOSFET N-CH 100V 3.1A SOT23-3

MOSFET N-CH 100V 3.1A SOT23-3

Supplier's Site Datasheet
MOSFETs - 1807275 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1807275
MOSFETs 1807275
N-Ch MOSFET SOT-23 100V 189mohm @ 4.5V

N-Ch MOSFET SOT-23 100V 189mohm @ 4.5V

Supplier's Site
MOSFETs - 1807811P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1807811P
MOSFETs 1807811P
N-Ch MOSFET SOT-23 100V 189mohm @ 4.5V

N-Ch MOSFET SOT-23 100V 189mohm @ 4.5V

Supplier's Site
MOSFETs - 1807811 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1807811
MOSFETs 1807811
N-Ch MOSFET SOT-23 100V 189mohm @ 4.5V

N-Ch MOSFET SOT-23 100V 189mohm @ 4.5V

Supplier's Site
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
SI2392ADS-T1-GE3
Triode/MOS Tube/Transistor >> MOSFETs SI2392ADS-T1-GE3
100V 3.1A 126mΩ@10V,2A 3V@250uA N Channel SOT-23 MOSFETs ROHS

100V 3.1A 126mΩ@10V,2A 3V@250uA N Channel SOT-23 MOSFETs ROHS

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI2392ADS-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI2392ADS-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI2392ADS-T1-GE3
MOSFET N-CH 100V 3.1A SOT23-3

MOSFET N-CH 100V 3.1A SOT23-3

Supplier's Site
Mosfet, N-Ch, 100V, 3.1A, Sot-23; Transistor Polarity Vishay - 01AC4985 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 100V, 3.1A, Sot-23; Transistor Polarity Vishay
01AC4985
Mosfet, N-Ch, 100V, 3.1A, Sot-23; Transistor Polarity Vishay 01AC4985
MOSFET, N-CH, 100V, 3.1A, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:3.1A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.102ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes

MOSFET, N-CH, 100V, 3.1A, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:3.1A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.102ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
MOSFET 100V Vds 20V Vgs SOT-23

MOSFET 100V Vds 20V Vgs SOT-23

Buy Now Datasheet

Technical Specifications

  ERSAELECTRONICS PTE. LTD. DigiKey Win Source Electronics ODG (Origin Data Global) RS Components, Ltd. LCSC Electronics Technology (HK) Limited Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 278-SI2392ADS-T1-GE3 SI2392ADS-T1-GE3CT-ND 1095761-SI2392ADS-T1-GE3 SI2392ADS-T1-GE3 1807275 SI2392ADS-T1-GE3 SI2392ADS-T1-GE3 01AC4985 SI2392ADS-T1-GE3
Product Name N-Channel 3.1A 100V MOSFET Transistor Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2392ADS-T1-GE3 Single FETs, MOSFETs MOSFETs Triode/MOS Tube/Transistor >> MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 100V, 3.1A, Sot-23; Transistor Polarity Vishay MOSFET
PD 2500 milliwatts 1250 to 2500 milliwatts 1250 milliwatts 1250 milliwatts
TJ -55 C (-67 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel N-Channel
Package Type SOT23; TO-236-3, SC-59, SOT-23-3 SOT3; SOT23; SOT-23-3 (TO-236) SOT23; TO-236-3, SC-59, SOT-23-3 SOT23; SOT-23 SOT23 SOT23; TO-236-3, SC-59, SOT-23-3 TO-3; SOT23
V(BR)DSS 100 volts 100 volts 100 volts
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