Trans MOSFET P-CH 80V 2.1A 3-Pin SOT-23 T/R Product overview: SI2387DS-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 2.1A, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 2.1A, SOT-23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2387DS-T1-GE3 can be used for catalog matching and distributor lookup.
Win Source Part Number: 1357031-SI2387DS-T1-
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Fake Threat In the Open Market: 46 pct.
MSL Level: 1 (Unlimited)
Mfr: Vishay Siliconix
Series: TrenchFET® Gen IV
Package: Tape & Reel
Product Status: Active
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta), 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 164mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 395 pF @ 40 V
Power Dissipation (Max): 1.3W (Ta), 2.5W (Tc)
Mounting Type: Surface Mount
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99
P-Channel 80V 2.1A (Ta), 3A (Tc) 1.3W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)
P-Channel 80V 2.1A (Ta), 3A (Tc) 1.3W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)
P-Channel 80V 2.1A (Ta), 3A (Tc) 1.3W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)
P-CHANNEL -80V SOT-23, 164 M @ 1
MOSFET, P-CH, 80V, 3A, 150DEG C, 2.5W ROHS COMPLIANT: YES
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SI2387DS-T1-GE3 | 1357031-SI2387DS-T1-GE3 | 742-SI2387DS-T1-GE3TR-ND | SI2387DS-T1-GE3 | 50AJ6065 |
| Product Name | 80V 2.1A SOT-23 MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P-Ch, 80V, 3A, 150Deg C, 2.5W Rohs Compliant Vishay |
| MOSFET Operating Mode | Enhancement | ||||
| V(BR)DSS | 80 volts | ||||
| PD | 1300 milliwatts | ||||
| TJ | -55 C (-67 F) |
