MOSFET N-CH 20V 4.5A/5.9A SOT23
Manufacturer: Vishay
Win Source Part Number: 189615-SI2374DS-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 96mW, 80mW
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4.5A (Ta), 18A (Tc)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 20nC @ 10V
Max Input Capacitance: 735pF @ 15V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 30 mOhm @ 4A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Limited
N-channel MOSFET 20V 5.9A 30mOhm SOT-23
N-channel MOSFET 20V 5.9A 30mOhm SOT-23
N-channel MOSFET 20V 5.9A 30mOhm SOT-23
N-Channel 20V 4.5A (Ta), 5.9A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)
N-Channel 20V 4.5A (Ta), 5.9A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)
N-Channel 20V 4.5A (Ta), 5.9A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)
MOSFET, N-CH, 20V, 5.9A, SOT-23; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:5.9A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1V; MSL:- RoHS Compliant: Yes
MOSFET, N-CH, 20V, 5.9A, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:5.9A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.025ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Power RoHS Compliant: Yes
MOSFET N-CH 20V 4.5A/5.9A SOT23
20V 30mΩ@4A,4.5V 1V@250uA N Channel SOT-23-3(TO-236-3) MOSFETs ROHS
| ODG (Origin Data Global) | Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | DigiKey | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI2374DS-T1-GE3 | 189615-SI2374DS-T1-GE3 | 1464438 | 1526360P | SI2374DS-T1-GE3DKR-ND | 70AC6499 | 05AC9485 | SI2374DS-T1-GE3 | SI2374DS-T1-GE3 | SI2374DS-T1-GE3 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2374DS-T1-GE3 | MOSFETs | MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 20V, 5.9A, Sot-23; Channel Type Vishay | Mosfet, N-Ch, 20V, 5.9A, Sot-23; Transistor Polarity Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||||
| V(BR)DSS | 20 volts | 20 volts | 20 volts | |||||||
| IDSS | 4500 milliamps | 5900 milliamps | 5900 milliamps | |||||||
| PD | 960 milliwatts | 96 to 80 milliwatts | 960 milliwatts |
