Vishay Intertechnology, Inc. Single FETs, MOSFETs SI2371EDS-T1-GE3

Description
MOSFET P-CH 30V 4.8A SOT-23
Request a Quote Datasheet
Description
MOSFET P-CH 30V 4.8A SOT-23
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SI2371EDS-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI2371EDS-T1-GE3
Single FETs, MOSFETs SI2371EDS-T1-GE3
MOSFET P-CH 30V 4.8A SOT-23

MOSFET P-CH 30V 4.8A SOT-23

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2371EDS-T1-GE3 - 1095759-SI2371EDS-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2371EDS-T1-GE3
1095759-SI2371EDS-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2371EDS-T1-GE3 1095759-SI2371EDS-T1-GE3
Manufacturer: Vishay Win Source Part Number: 1095759-SI2371EDS-T1 -GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1W (Ta), 1.7W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 4.8A (Tc) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 35nC @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 45 mOhm @ 3.7A, 10V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 1095759-SI2371EDS-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1W (Ta), 1.7W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 4.8A (Tc)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 35nC @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 45 mOhm @ 3.7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore
P-Channel 4.8A 30V MOSFET Transistor
278-SI2371EDS-T1-GE3
P-Channel 4.8A 30V MOSFET Transistor 278-SI2371EDS-T1-GE3
Small Signal Field-Effect Transistor, 4.8A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN Product overview: SI2371EDS-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 4.8A, 30V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 4.8A, 30V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2371EDS-T1-GE3 can be used for catalog matching and distributor lookup.

Small Signal Field-Effect Transistor, 4.8A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN Product overview: SI2371EDS-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 4.8A, 30V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 4.8A, 30V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2371EDS-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - SI2371EDS-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI2371EDS-T1-GE3TR-ND
Single FETs, MOSFETs SI2371EDS-T1-GE3TR-ND
P-Channel 30V 4.8A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount SOT-23

P-Channel 30V 4.8A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount SOT-23

Buy Now Datasheet
Single FETs, MOSFETs - SI2371EDS-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI2371EDS-T1-GE3CT-ND
Single FETs, MOSFETs SI2371EDS-T1-GE3CT-ND
P-Channel 30V 4.8A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount SOT-23

P-Channel 30V 4.8A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount SOT-23

Buy Now Datasheet
Single FETs, MOSFETs - SI2371EDS-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI2371EDS-T1-GE3DKR-ND
Single FETs, MOSFETs SI2371EDS-T1-GE3DKR-ND
P-Channel 30V 4.8A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount SOT-23

P-Channel 30V 4.8A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount SOT-23

Buy Now Datasheet
MOSFET -30V Vds 12V Vgs SOT-23

MOSFET -30V Vds 12V Vgs SOT-23

Buy Now Datasheet
Mosfet, P-Ch, -30V, -4.8A, Sot-23-3; Transistor Polarity Vishay - 04AJ4585 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, -30V, -4.8A, Sot-23-3; Transistor Polarity Vishay
04AJ4585
Mosfet, P-Ch, -30V, -4.8A, Sot-23-3; Transistor Polarity Vishay 04AJ4585
MOSFET, P-CH, -30V, -4.8A, SOT-23-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-4.8A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.037ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.5V; Power RoHS Compliant: Yes

MOSFET, P-CH, -30V, -4.8A, SOT-23-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-4.8A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.037ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.5V; Power RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI2371EDS-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI2371EDS-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI2371EDS-T1-GE3
MOSFET P-CH 30V 4.8A SOT-23

MOSFET P-CH 30V 4.8A SOT-23

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SI2371EDS-T1-GE3 1095759-SI2371EDS-T1-GE3 278-SI2371EDS-T1-GE3 SI2371EDS-T1-GE3TR-ND SI2371EDS-T1-GE3 04AJ4585 SI2371EDS-T1-GE3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2371EDS-T1-GE3 P-Channel 4.8A 30V MOSFET Transistor Single FETs, MOSFETs MOSFET Mosfet, P-Ch, -30V, -4.8A, Sot-23-3; Transistor Polarity Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel; P-Channel P-Channel P-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 30 volts 30 volts
IDSS 4800 milliamps -4800 milliamps
PD 1000 milliwatts 1000 to 1700 milliwatts 1700 milliwatts
Unlock Full Specs
to access all available technical data