Small Signal Field-Effect Transistor, 4.8A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN Product overview: SI2371EDS-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 4.8A, 30V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 4.8A, 30V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2371EDS-T1-GE3
MOSFET P-CH 30V 4.8A SOT-23
P-Channel 30V 4.8A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount SOT-23
P-Channel 30V 4.8A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount SOT-23
P-Channel 30V 4.8A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount SOT-23
Manufacturer: Vishay
Win Source Part Number: 1095759-SI2371EDS-T1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1W (Ta), 1.7W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 4.8A (Tc)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 35nC @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 45 mOhm @ 3.7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Limited
MOSFET P-CH 30V 4.8A SOT-23
MOSFET -30V Vds 12V Vgs SOT-23
MOSFET, P-CH, -30V, -4.8A, SOT-23-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-4.8A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.037ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.5V; Power RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SI2371EDS-T1-GE3 | SI2371EDS-T1-GE3 | SI2371EDS-T1-GE3TR-ND | 1095759-SI2371EDS-T1-GE3 | SI2371EDS-T1-GE3 | SI2371EDS-T1-GE3 | 04AJ4585 |
| Product Name | P-Channel 4.8A 30V MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2371EDS-T1-GE3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, P-Ch, -30V, -4.8A, Sot-23-3; Transistor Polarity Vishay |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel; P-Channel | |||
| PD | 1700 milliwatts | 1000 milliwatts | 1000 to 1700 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 30 volts | 30 volts |
