Vishay Intertechnology, Inc. Single FETs, MOSFETs SI2371EDS-T1-GE3

MOSFET P-CH 30V 4.8A SOT-23

Manufacturer: Vishay
Win Source Part Number: 1095759-SI2371EDS-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1W (Ta), 1.7W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 4.8A (Tc)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 35nC @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 45 mOhm @ 3.7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Limited

Small Signal Field-Effect Transistor, 4.8A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN Product overview: SI2371EDS-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 4.8A, 30V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 4.8A, 30V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2371EDS-T1-GE3 can be used for catalog matching and distributor lookup.

P-Channel 30V 4.8A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount SOT-23

P-Channel 30V 4.8A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount SOT-23

P-Channel 30V 4.8A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount SOT-23