Vishay Intertechnology, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SI2369BDS-T1-GE3

Description
Win Source Part Number: 1277612-SI2369BDS-T1 -GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Gen IV Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta), 7.5A (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 1.3W (Ta), 2.5W (Tc) Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236) Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 745 pF @ 15 V Vgs (Max): +16V, -20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 52 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: 742-SI2369BDS-T1-GE3 DKR,742-SI2369BDS-T1 -GE3TR,742-SI2369BDS -T1-GE3CT Base Product Number: SI2369 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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Description
Win Source Part Number: 1277612-SI2369BDS-T1 -GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Gen IV Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta), 7.5A (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 1.3W (Ta), 2.5W (Tc) Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236) Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 745 pF @ 15 V Vgs (Max): +16V, -20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 52 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: 742-SI2369BDS-T1-GE3 DKR,742-SI2369BDS-T1 -GE3TR,742-SI2369BDS -T1-GE3CT Base Product Number: SI2369 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1277612-SI2369BDS-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1277612-SI2369BDS-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1277612-SI2369BDS-T1-GE3
Win Source Part Number: 1277612-SI2369BDS-T1 -GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Gen IV Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta), 7.5A (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 1.3W (Ta), 2.5W (Tc) Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236) Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 745 pF @ 15 V Vgs (Max): +16V, -20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 52 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: 742-SI2369BDS-T1-GE3 DKR,742-SI2369BDS-T1 -GE3TR,742-SI2369BDS -T1-GE3CT Base Product Number: SI2369 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Win Source Part Number: 1277612-SI2369BDS-T1-GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: TrenchFET® Gen IV
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta), 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 1.3W (Ta), 2.5W (Tc)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 745 pF @ 15 V
Vgs (Max): +16V, -20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 52 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: 742-SI2369BDS-T1-GE3DKR,742-SI2369BDS-T1-GE3TR,742-SI2369BDS-T1-GE3CT
Base Product Number: SI2369
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Buy Now Datasheet
Single FETs, MOSFETs - SI2369BDS-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI2369BDS-T1-GE3
Single FETs, MOSFETs SI2369BDS-T1-GE3
MOSFET P-CH 30V 5.6A/7.5A SOT23

MOSFET P-CH 30V 5.6A/7.5A SOT23

Supplier's Site Datasheet
Single FETs, MOSFETs - 742-SI2369BDS-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
742-SI2369BDS-T1-GE3TR-ND
Single FETs, MOSFETs 742-SI2369BDS-T1-GE3TR-ND
P-Channel 30V 5.6A (Ta), 7.5A (Tc) 1.3W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)

P-Channel 30V 5.6A (Ta), 7.5A (Tc) 1.3W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Single FETs, MOSFETs - 742-SI2369BDS-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
742-SI2369BDS-T1-GE3DKR-ND
Single FETs, MOSFETs 742-SI2369BDS-T1-GE3DKR-ND
P-Channel 30V 5.6A (Ta), 7.5A (Tc) 1.3W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)

P-Channel 30V 5.6A (Ta), 7.5A (Tc) 1.3W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Single FETs, MOSFETs - 742-SI2369BDS-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
742-SI2369BDS-T1-GE3CT-ND
Single FETs, MOSFETs 742-SI2369BDS-T1-GE3CT-ND
P-Channel 30V 5.6A (Ta), 7.5A (Tc) 1.3W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)

P-Channel 30V 5.6A (Ta), 7.5A (Tc) 1.3W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Singapore
30V 7.5A SOT-23 MOSFET Transistor
278-SI2369BDS-T1-GE3
30V 7.5A SOT-23 MOSFET Transistor 278-SI2369BDS-T1-GE3
Trans MOSFET P-CH 30V 7.5A 3-Pin SOT-23 T/R Product overview: SI2369BDS-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 7.5A, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 7.5A, SOT-23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2369BDS-T1-GE3 can be used for catalog matching and distributor lookup.

Trans MOSFET P-CH 30V 7.5A 3-Pin SOT-23 T/R Product overview: SI2369BDS-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 7.5A, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 7.5A, SOT-23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2369BDS-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI2369BDS-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI2369BDS-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI2369BDS-T1-GE3
MOSFET P-CH 30V 5.6A/7.5A SOT23

MOSFET P-CH 30V 5.6A/7.5A SOT23

Supplier's Site
Mosfet, P-Ch, -30V, -7.5A, 2.5W Rohs Compliant Vishay - 04AJ4584 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, -30V, -7.5A, 2.5W Rohs Compliant Vishay
04AJ4584
Mosfet, P-Ch, -30V, -7.5A, 2.5W Rohs Compliant Vishay 04AJ4584
MOSFET, P-CH, -30V, -7.5A, 2.5W ROHS COMPLIANT: YES

MOSFET, P-CH, -30V, -7.5A, 2.5W ROHS COMPLIANT: YES

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1277612-SI2369BDS-T1-GE3 SI2369BDS-T1-GE3 742-SI2369BDS-T1-GE3TR-ND 278-SI2369BDS-T1-GE3 SI2369BDS-T1-GE3 04AJ4584
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Single FETs, MOSFETs 30V 7.5A SOT-23 MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, P-Ch, -30V, -7.5A, 2.5W Rohs Compliant Vishay
Polarity P-Channel P-Channel; P-Channel P-Channel P-Channel
Package Type SOT3; SOT23 SOT23; TO-236-3, SC-59, SOT-23-3 SOT23; TO-236-3, SC-59, SOT-23-3 Tape and Reel SOT23; TO-236-3, SC-59, SOT-23-3 TO-3
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 30 volts 30 volts
IDSS 5600 milliamps
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