P-Channel 30V 5.6A (Ta), 7.5A (Tc) 1.3W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)
P-Channel 30V 5.6A (Ta), 7.5A (Tc) 1.3W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)
P-Channel 30V 5.6A (Ta), 7.5A (Tc) 1.3W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)
Trans MOSFET P-CH 30V 7.5A 3-Pin SOT-23 T/R Product overview: SI2369BDS-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 7.5A, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 7.5A, SOT-23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2369BDS-T1-GE3
MOSFET P-CH 30V 5.6A/7.5A SOT23
Win Source Part Number: 1277612-SI2369BDS-T1
Category: Discrete Semiconductor Products>Transistors
Series: TrenchFET® Gen IV
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta), 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 1.3W (Ta), 2.5W (Tc)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 745 pF @ 15 V
Vgs (Max): +16V, -20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 52 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: 742-SI2369BDS-T1-GE3
Base Product Number: SI2369
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
MOSFET, P-CH, -30V, -7.5A, 2.5W ROHS COMPLIANT: YES
MOSFET P-CH 30V 5.6A/7.5A SOT23
| DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 742-SI2369BDS-T1-GE3TR-ND | 278-SI2369BDS-T1-GE3 | SI2369BDS-T1-GE3 | 1277612-SI2369BDS-T1-GE3 | 04AJ4584 | SI2369BDS-T1-GE3 |
| Product Name | Single FETs, MOSFETs | 30V 7.5A SOT-23 MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Mosfet, P-Ch, -30V, -7.5A, 2.5W Rohs Compliant Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | ||
| Package Type | SOT23; TO-236-3, SC-59, SOT-23-3 | Tape and Reel | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT3; SOT23 | TO-3 | SOT23; TO-236-3, SC-59, SOT-23-3 |
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 30 volts | 30 volts | ||||
| Transconductance | 0.0100 kS |
