MOSFET P-CH 20V 3.8A SOT23-3
P-Channel 20V 3.8A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)
P-Channel 20V 3.8A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)
P-Channel 20V 3.8A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)
Manufacturer: Vishay
Win Source Part Number: 028395-SI2367DS-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 3.8A (Tc)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 23nC @ 8V
Max Input Capacitance: 561pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 66 mOhm @ 2.5A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Balance
MOSFET P-CH 20V 3.8A SOT23-3
MOSFET -20V Vds 8V Vgs SOT-23
P CHANNEL MOSFET, -20V, 3.8A, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:3.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:400mV RoHS Compliant: Yes
MOSFET, P-CH, 20V, 3.8A, TO-236 ROHS COMPLIANT: YES
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI2367DS-T1-GE3 | SI2367DS-T1-GE3DKR-ND | 028395-SI2367DS-T1-GE3 | 8123136 | 8123136P | SI2367DS-T1-GE3 | SI2367DS-T1-GE3 | 35R0031 | 57AJ0431 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2367DS-T1-GE3 | MOSFETs | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | P Channel Mosfet, -20V, 3.8A, Full Reel; Channel Type Vishay | Mosfet, P-Ch, 20V, 3.8A, To-236 Rohs Compliant Vishay |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||
| V(BR)DSS | 20 volts | 20 volts | |||||||
| IDSS | 3800 milliamps | 3800 milliamps | |||||||
| PD | 960 milliwatts | 960 to 1700 milliwatts |
