Vishay Precision Group Single FETs, MOSFETs SI2367DS-T1-GE3

Description
MOSFET P-CH 20V 3.8A SOT23-3
Request a Quote Datasheet
Description
MOSFET P-CH 20V 3.8A SOT23-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SI2367DS-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI2367DS-T1-GE3
Single FETs, MOSFETs SI2367DS-T1-GE3
MOSFET P-CH 20V 3.8A SOT23-3

MOSFET P-CH 20V 3.8A SOT23-3

Supplier's Site Datasheet
Single FETs, MOSFETs - SI2367DS-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI2367DS-T1-GE3DKR-ND
Single FETs, MOSFETs SI2367DS-T1-GE3DKR-ND
P-Channel 20V 3.8A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)

P-Channel 20V 3.8A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Single FETs, MOSFETs - SI2367DS-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI2367DS-T1-GE3TR-ND
Single FETs, MOSFETs SI2367DS-T1-GE3TR-ND
P-Channel 20V 3.8A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)

P-Channel 20V 3.8A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Single FETs, MOSFETs - SI2367DS-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI2367DS-T1-GE3CT-ND
Single FETs, MOSFETs SI2367DS-T1-GE3CT-ND
P-Channel 20V 3.8A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)

P-Channel 20V 3.8A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2367DS-T1-GE3 - 028395-SI2367DS-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2367DS-T1-GE3
028395-SI2367DS-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2367DS-T1-GE3 028395-SI2367DS-T1-GE3
Manufacturer: Vishay Win Source Part Number: 028395-SI2367DS-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 960mW (Ta), 1.7W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 3.8A (Tc) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 23nC @ 8V Max Input Capacitance: 561pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 66 mOhm @ 2.5A, 4.5V Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 028395-SI2367DS-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 3.8A (Tc)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 23nC @ 8V
Max Input Capacitance: 561pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 66 mOhm @ 2.5A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
MOSFETs - 8123136 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
8123136
MOSFETs 8123136
Trans MOSFET P-CH 20V 2.8A 3-Pin

Trans MOSFET P-CH 20V 2.8A 3-Pin

Supplier's Site
MOSFETs - 8123136P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
8123136P
MOSFETs 8123136P
Trans MOSFET P-CH 20V 2.8A 3-Pin

Trans MOSFET P-CH 20V 2.8A 3-Pin

Supplier's Site
MOSFETs - 1656933 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1656933
MOSFETs 1656933
Trans MOSFET P-CH 20V 2.8A 3-Pin

Trans MOSFET P-CH 20V 2.8A 3-Pin

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI2367DS-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI2367DS-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI2367DS-T1-GE3
MOSFET P-CH 20V 3.8A SOT23-3

MOSFET P-CH 20V 3.8A SOT23-3

Supplier's Site
Sheung Wan, Hong Kong
MOSFET -20V Vds 8V Vgs SOT-23

MOSFET -20V Vds 8V Vgs SOT-23

Buy Now Datasheet
P Channel Mosfet, -20V, 3.8A, Full Reel; Channel Type Vishay - 35R0031 - Newark, An Avnet Company
Chicago, IL, United States
P Channel Mosfet, -20V, 3.8A, Full Reel; Channel Type Vishay
35R0031
P Channel Mosfet, -20V, 3.8A, Full Reel; Channel Type Vishay 35R0031
P CHANNEL MOSFET, -20V, 3.8A, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:3.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:400mV RoHS Compliant: Yes

P CHANNEL MOSFET, -20V, 3.8A, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:3.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:400mV RoHS Compliant: Yes

Supplier's Site
Mosfet, P-Ch, 20V, 3.8A, To-236 Rohs Compliant Vishay - 57AJ0431 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, 20V, 3.8A, To-236 Rohs Compliant Vishay
57AJ0431
Mosfet, P-Ch, 20V, 3.8A, To-236 Rohs Compliant Vishay 57AJ0431
MOSFET, P-CH, 20V, 3.8A, TO-236 ROHS COMPLIANT: YES

MOSFET, P-CH, 20V, 3.8A, TO-236 ROHS COMPLIANT: YES

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics RS Components, Ltd. RS Components, Ltd. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number SI2367DS-T1-GE3 SI2367DS-T1-GE3DKR-ND 028395-SI2367DS-T1-GE3 8123136 8123136P SI2367DS-T1-GE3 SI2367DS-T1-GE3 35R0031 57AJ0431
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2367DS-T1-GE3 MOSFETs MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET P Channel Mosfet, -20V, 3.8A, Full Reel; Channel Type Vishay Mosfet, P-Ch, 20V, 3.8A, To-236 Rohs Compliant Vishay
Polarity P-Channel; P-Channel P-Channel P-Channel; P-Channel P-Channel P-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 20 volts 20 volts
IDSS 3800 milliamps 3800 milliamps
PD 960 milliwatts 960 to 1700 milliwatts
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