Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2365EDS-T1-GE3 SI2365EDS-T1-GE3

Description
Manufacturer: Vishay Win Source Part Number: 115047-SI2365EDS-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1W (Ta), 1.7W (Tc) Family Name: Si2365EDS Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-236 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 5.9A (Tc) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 36nC @ 8V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 32 mOhm @ 4A, 4.5V Alternative Parts (Cross-Reference): TSM2323CX RF; TSM2311CX; TSM2311CX RF; Introduction Date: November 05, 2013 ECCN: EAR99 Estimated EOL Date: 2026 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Vishay Win Source Part Number: 115047-SI2365EDS-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1W (Ta), 1.7W (Tc) Family Name: Si2365EDS Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-236 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 5.9A (Tc) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 36nC @ 8V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 32 mOhm @ 4A, 4.5V Alternative Parts (Cross-Reference): TSM2323CX RF; TSM2311CX; TSM2311CX RF; Introduction Date: November 05, 2013 ECCN: EAR99 Estimated EOL Date: 2026 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2365EDS-T1-GE3 - 115047-SI2365EDS-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2365EDS-T1-GE3
115047-SI2365EDS-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2365EDS-T1-GE3 115047-SI2365EDS-T1-GE3
Manufacturer: Vishay Win Source Part Number: 115047-SI2365EDS-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1W (Ta), 1.7W (Tc) Family Name: Si2365EDS Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-236 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 5.9A (Tc) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 36nC @ 8V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 32 mOhm @ 4A, 4.5V Alternative Parts (Cross-Reference): TSM2323CX RF; TSM2311CX; TSM2311CX RF; Introduction Date: November 05, 2013 ECCN: EAR99 Estimated EOL Date: 2026 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 115047-SI2365EDS-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1W (Ta), 1.7W (Tc)
Family Name: Si2365EDS
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-236
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 5.9A (Tc)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 36nC @ 8V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 32 mOhm @ 4A, 4.5V
Alternative Parts (Cross-Reference): TSM2323CX RF; TSM2311CX; TSM2311CX RF;
Introduction Date: November 05, 2013
ECCN: EAR99
Estimated EOL Date: 2026
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
MOSFETs - 8123139P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
8123139P
MOSFETs 8123139P
Trans MOSFET P-CH 20V 4.5A 3-Pin

Trans MOSFET P-CH 20V 4.5A 3-Pin

Supplier's Site
MOSFETs - 8123139 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
8123139
MOSFETs 8123139
Trans MOSFET P-CH 20V 4.5A 3-Pin

Trans MOSFET P-CH 20V 4.5A 3-Pin

Supplier's Site
MOSFETs - 1656934 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1656934
MOSFETs 1656934
Trans MOSFET P-CH 20V 4.5A 3-Pin

Trans MOSFET P-CH 20V 4.5A 3-Pin

Supplier's Site
Single FETs, MOSFETs - SI2365EDS-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI2365EDS-T1-GE3DKR-ND
Single FETs, MOSFETs SI2365EDS-T1-GE3DKR-ND
P-Channel 20V 5.9A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)

P-Channel 20V 5.9A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Single FETs, MOSFETs - SI2365EDS-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI2365EDS-T1-GE3TR-ND
Single FETs, MOSFETs SI2365EDS-T1-GE3TR-ND
P-Channel 20V 5.9A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)

P-Channel 20V 5.9A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Single FETs, MOSFETs - SI2365EDS-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI2365EDS-T1-GE3CT-ND
Single FETs, MOSFETs SI2365EDS-T1-GE3CT-ND
P-Channel 20V 5.9A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)

P-Channel 20V 5.9A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Singapore
P-Channel -5.9A -20V MOSFET Transistor
278-SI2365EDS-T1-GE3
P-Channel -5.9A -20V MOSFET Transistor 278-SI2365EDS-T1-GE3
P-Channel JFET, -5.9A ID, -20V Vdss, 32mR Rds On, TO-236 Product overview: SI2365EDS-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, -5.9A, -20V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -5.9A, -20V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2365EDS-T1-GE3 can be used for catalog matching and distributor lookup.

P-Channel JFET, -5.9A ID, -20V Vdss, 32mR Rds On, TO-236 Product overview: SI2365EDS-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, -5.9A, -20V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -5.9A, -20V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2365EDS-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI2365EDS-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI2365EDS-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI2365EDS-T1-GE3
MOSFET P-CH 20V 5.9A TO236

MOSFET P-CH 20V 5.9A TO236

Supplier's Site
Single FETs, MOSFETs - SI2365EDS-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI2365EDS-T1-GE3
Single FETs, MOSFETs SI2365EDS-T1-GE3
MOSFET P-CH 20V 5.9A TO236

MOSFET P-CH 20V 5.9A TO236

Supplier's Site Datasheet
Mosfet, P-Ch, -20V, -5.9A, Sot-23; Transistor Polarity Vishay - 05AC9484 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, -20V, -5.9A, Sot-23; Transistor Polarity Vishay
05AC9484
Mosfet, P-Ch, -20V, -5.9A, Sot-23; Transistor Polarity Vishay 05AC9484
MOSFET, P-CH, -20V, -5.9A, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-5.9A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.0265ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-1V; Power RoHS Compliant: Yes

MOSFET, P-CH, -20V, -5.9A, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-5.9A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.0265ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-1V; Power RoHS Compliant: Yes

Supplier's Site
Mosfet, P-Ch, -20V, -5.9A, Sot-23; Channel Type Vishay - 70AC6497 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, -20V, -5.9A, Sot-23; Channel Type Vishay
70AC6497
Mosfet, P-Ch, -20V, -5.9A, Sot-23; Channel Type Vishay 70AC6497
MOSFET, P-CH, -20V, -5.9A, SOT-23; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:5.9A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1V; MSL:- RoHS Compliant: Yes

MOSFET, P-CH, -20V, -5.9A, SOT-23; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:5.9A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1V; MSL:- RoHS Compliant: Yes

Supplier's Site
MOSFET -20V Vds 8V Vgs SOT-23

MOSFET -20V Vds 8V Vgs SOT-23

Buy Now Datasheet

Technical Specifications

  Win Source Electronics RS Components, Ltd. RS Components, Ltd. DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global) Newark, An Avnet Company Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 115047-SI2365EDS-T1-GE3 8123139P 8123139 SI2365EDS-T1-GE3DKR-ND 278-SI2365EDS-T1-GE3 SI2365EDS-T1-GE3 SI2365EDS-T1-GE3 05AC9484 70AC6497 SI2365EDS-T1-GE3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2365EDS-T1-GE3 MOSFETs MOSFETs Single FETs, MOSFETs P-Channel -5.9A -20V MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs Single FETs, MOSFETs Mosfet, P-Ch, -20V, -5.9A, Sot-23; Transistor Polarity Vishay Mosfet, P-Ch, -20V, -5.9A, Sot-23; Channel Type Vishay MOSFET
Polarity P-Channel; P-Channel P-Channel P-Channel P-Channel P-Channel; P-Channel
V(BR)DSS 20 volts 20 volts
PD 1000 to 1700 milliwatts 1700 milliwatts 1000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; SOT23; TO-236 SOT23; SOT-23 SOT23; Sot-23 (to-236) SOT23; TO-236-3, SC-59, SOT-23-3 SOT23; TO-236-3, SC-59, SOT-23-3 SOT23; TO-236-3, SC-59, SOT-23-3 TO-3; SOT23 TO-3; SOT23
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