Vishay Intertechnology, Inc. Single FETs, MOSFETs SI2351DS-T1-E3

Description
MOSFET P-CH 20V 2.8A SOT23-3
Request a Quote Datasheet
Description
MOSFET P-CH 20V 2.8A SOT23-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SI2351DS-T1-E3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI2351DS-T1-E3
Single FETs, MOSFETs SI2351DS-T1-E3
MOSFET P-CH 20V 2.8A SOT23-3

MOSFET P-CH 20V 2.8A SOT23-3

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2351DS-T1-E3 - 142282-SI2351DS-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2351DS-T1-E3
142282-SI2351DS-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2351DS-T1-E3 142282-SI2351DS-T1-E3
Manufacturer: Vishay Win Source Part Number: 142282-SI2351DS-T1-E 3 Packaging: Cut Reel Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1W (Ta), 2.1W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 2.8A (Tc) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 5.1nC @ 5V Max Input Capacitance: 250pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 115 mOhm @ 2.4A, 4.5V Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Limited Application Field: Used in Industrial, Power Management

Manufacturer: Vishay
Win Source Part Number: 142282-SI2351DS-T1-E3
Packaging: Cut Reel
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1W (Ta), 2.1W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 2.8A (Tc)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 5.1nC @ 5V
Max Input Capacitance: 250pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 115 mOhm @ 2.4A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial, Power Management

Buy Now Datasheet
Singapore
20V 2.8A SOT23 MOSFET Transistor
278-SI2351DS-T1-E3
20V 2.8A SOT23 MOSFET Transistor 278-SI2351DS-T1-E3
MOSFET P-CH 20V 2.8A SOT23-3 Product overview: SI2351DS-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 2.8A, SOT23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 2.8A, SOT23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2351DS-T1-E3 can be used for catalog matching and distributor lookup.

MOSFET P-CH 20V 2.8A SOT23-3 Product overview: SI2351DS-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 2.8A, SOT23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 2.8A, SOT23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2351DS-T1-E3 can be used for catalog matching and distributor lookup.

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI2351DS-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI2351DS-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI2351DS-T1-E3
MOSFET P-CH 20V 2.8A SOT23-3

MOSFET P-CH 20V 2.8A SOT23-3

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SI2351DS-T1-E3 142282-SI2351DS-T1-E3 278-SI2351DS-T1-E3 SI2351DS-T1-E3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2351DS-T1-E3 20V 2.8A SOT23 MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel; P-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 20 volts 20 volts
IDSS 2800 milliamps
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