Vishay Intertechnology, Inc. Single FETs, MOSFETs SI2343DS-T1

Description
P-Channel 30V 3.1A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
Request a Quote Datasheet
Description
P-Channel 30V 3.1A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SI2343DS-T1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI2343DS-T1-ND
Single FETs, MOSFETs SI2343DS-T1-ND
P-Channel 30V 3.1A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

P-Channel 30V 3.1A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
FETs - Single - SI2343DS-T1 - 716182-SI2343DS-T1 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - SI2343DS-T1
716182-SI2343DS-T1
FETs - Single - SI2343DS-T1 716182-SI2343DS-T1
Manufacturer: Vishay Siliconix Win Source Part Number: 716182-SI2343DS-T1 Packaging: Tape and Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: TO-236-3, SC-59, SOT-23-3 Power Dissipation (Maximum): 750mW Popularity: Low Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 3,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 30V Id - Continuous Drain Current: 3.1A Rds On (Maximum) at Id, Vgs: 53mOhm at 4A, 10V Gate Source Voltage(th) (Maximum) at Id: 3V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 21nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 540pF at 15V

Manufacturer: Vishay Siliconix
Win Source Part Number: 716182-SI2343DS-T1
Packaging: Tape and Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: P-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-236-3, SC-59, SOT-23-3
Power Dissipation (Maximum): 750mW
Popularity: Low
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 30V
Id - Continuous Drain Current: 3.1A
Rds On (Maximum) at Id, Vgs: 53mOhm at 4A, 10V
Gate Source Voltage(th) (Maximum) at Id: 3V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 21nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 540pF at 15V

Buy Now
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI2343DS-T1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI2343DS-T1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI2343DS-T1
MOSFET P-CH 30V 3.1A SOT23-3

MOSFET P-CH 30V 3.1A SOT23-3

Supplier's Site
MOSFET P-CH 30V 3.1A SOT23 - 880-SI2343DS-T1 - Utmel Electronic Limited
Hong Kong, China
MOSFET P-CH 30V 3.1A SOT23
880-SI2343DS-T1
MOSFET P-CH 30V 3.1A SOT23 880-SI2343DS-T1
MOSFET P-CH 30V 3.1A SOT23

MOSFET P-CH 30V 3.1A SOT23

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number SI2343DS-T1-ND 716182-SI2343DS-T1 SI2343DS-T1 880-SI2343DS-T1
Product Name Single FETs, MOSFETs FETs - Single - SI2343DS-T1 Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET P-CH 30V 3.1A SOT23
Polarity P-Channel P-Channel; P-Channel
Package Type SOT23; TO-236-3, SC-59, SOT-23-3 SOT3; SOT23 SOT23; TO-236-3, SC-59, SOT-23-3
V(BR)DSS 30 volts
PD 750 milliwatts 750 milliwatts
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