Vishay Intertechnology, Inc. 30V 3.1A SOT23 MOSFET Transistor SI2343DS-T1

MOSFET P-CH 30V 3.1A SOT23-3 Product overview: SI2343DS-T1 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 3.1A, SOT23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 3.1A, SOT23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2343DS-T1 can be used for catalog matching and distributor lookup.

P-Channel 30V 3.1A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

Manufacturer: Vishay Siliconix
Win Source Part Number: 716182-SI2343DS-T1
Packaging: Tape and Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: P-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-236-3, SC-59, SOT-23-3
Power Dissipation (Maximum): 750mW
Popularity: Low
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 30V
Id - Continuous Drain Current: 3.1A
Rds On (Maximum) at Id, Vgs: 53mOhm at 4A, 10V
Gate Source Voltage(th) (Maximum) at Id: 3V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 21nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 540pF at 15V