Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2342DS-T1-GE3 SI2342DS-T1-GE3

Manufacturer: Vishay
Win Source Part Number: 1095752-SI2342DS-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.3W (Ta), 2.5W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 8V
Continuous Drain Current at 25°C: 6A (Tc)
Gate-Source Threshold Voltage: 800mV @ 250μA
Max Gate Charge: 15.8nC @ 4.5V
Max Input Capacitance: 1070pF @ 4V
Maximum Gate-Source Voltage: ±5V
Maximum Rds On at Id,Vgs: 17 mOhm @ 7.2A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Limited

N-Channel 8V 6A (Tc) 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)

N-Channel 8V 6A (Tc) 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)

N-Channel 8V 6A (Tc) 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)

N-CH MOSFET, 8V, 6A, 17mR, SOT-23, Power Product overview: SI2342DS-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 8V, 6A, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 8V, 6A, SOT-23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2342DS-T1-GE3 can be used for catalog matching and distributor lookup.