Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2341DS-T1-E3 SI2341DS-T1-E3

Description
Manufacturer: Vishay Win Source Part Number: 028392-SI2341DS-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 710mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 2.5A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 15nC @ 10V Max Input Capacitance: 400pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 72 mOhm @ 2.8A, 10V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 028392-SI2341DS-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 710mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 2.5A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 15nC @ 10V Max Input Capacitance: 400pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 72 mOhm @ 2.8A, 10V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2341DS-T1-E3 - 028392-SI2341DS-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2341DS-T1-E3
028392-SI2341DS-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2341DS-T1-E3 028392-SI2341DS-T1-E3
Manufacturer: Vishay Win Source Part Number: 028392-SI2341DS-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 710mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 2.5A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 15nC @ 10V Max Input Capacitance: 400pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 72 mOhm @ 2.8A, 10V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Sufficient

Manufacturer: Vishay
Win Source Part Number: 028392-SI2341DS-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 710mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 2.5A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 15nC @ 10V
Max Input Capacitance: 400pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 72 mOhm @ 2.8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI2341DS-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI2341DS-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI2341DS-T1-E3
MOSFET P-CH 30V 2.5A SOT23-3

MOSFET P-CH 30V 2.5A SOT23-3

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 028392-SI2341DS-T1-E3 SI2341DS-T1-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2341DS-T1-E3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel
V(BR)DSS 30 volts
PD 710 milliwatts
Unlock Full Specs
to access all available technical data

Similar Products

TRANSISTORS - Transistors (BJT) - Single - 2N5550TFR - 854974-2N5550TFR - Win Source Electronics
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details
DC - 4.0 GHz, 200 Watt Peak, 40 Watt Avg.Power, 50 Volt, GaN RF Power Transistor - TGF2819-FL - Qorvo
Specs
Transistor Technology / Material DC - 4.0 GHz, 200 Watt Peak, 40 Watt Avg.Power, 50 Volt, GaN RF Power Transistor
Transistor Grade / Operating Range Military
Package Type NI-360
View Details
2 suppliers