Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2337DS-T1-GE3 SI2337DS-T1-GE3

Description
Manufacturer: Vishay Win Source Part Number: 064398-SI2337DS-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 760mW (Ta), 2.5W (Tc) Family Name: Si2337DS Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -50°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 80V Continuous Drain Current at 25°C: 2.2A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 17nC @ 10V Max Input Capacitance: 500pF @ 40V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 270 mOhm @ 1.2A, 10V Introduction Date: December 02, 2005 ECCN: EAR99 Country of Origin: China, Taiwan Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Limited Application Field: Used in Industrial, Power Management
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Description
Manufacturer: Vishay Win Source Part Number: 064398-SI2337DS-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 760mW (Ta), 2.5W (Tc) Family Name: Si2337DS Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -50°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 80V Continuous Drain Current at 25°C: 2.2A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 17nC @ 10V Max Input Capacitance: 500pF @ 40V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 270 mOhm @ 1.2A, 10V Introduction Date: December 02, 2005 ECCN: EAR99 Country of Origin: China, Taiwan Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Limited Application Field: Used in Industrial, Power Management
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2337DS-T1-GE3 - 064398-SI2337DS-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2337DS-T1-GE3
064398-SI2337DS-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2337DS-T1-GE3 064398-SI2337DS-T1-GE3
Manufacturer: Vishay Win Source Part Number: 064398-SI2337DS-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 760mW (Ta), 2.5W (Tc) Family Name: Si2337DS Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -50°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 80V Continuous Drain Current at 25°C: 2.2A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 17nC @ 10V Max Input Capacitance: 500pF @ 40V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 270 mOhm @ 1.2A, 10V Introduction Date: December 02, 2005 ECCN: EAR99 Country of Origin: China, Taiwan Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Limited Application Field: Used in Industrial, Power Management

Manufacturer: Vishay
Win Source Part Number: 064398-SI2337DS-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 760mW (Ta), 2.5W (Tc)
Family Name: Si2337DS
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -50°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 80V
Continuous Drain Current at 25°C: 2.2A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 17nC @ 10V
Max Input Capacitance: 500pF @ 40V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 270 mOhm @ 1.2A, 10V
Introduction Date: December 02, 2005
ECCN: EAR99
Country of Origin: China, Taiwan
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial, Power Management

Buy Now Datasheet
Single FETs, MOSFETs - SI2337DS-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI2337DS-T1-GE3TR-ND
Single FETs, MOSFETs SI2337DS-T1-GE3TR-ND
P-Channel 80V 2.2A (Tc) 760mW (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)

P-Channel 80V 2.2A (Tc) 760mW (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Single FETs, MOSFETs - SI2337DS-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI2337DS-T1-GE3CT-ND
Single FETs, MOSFETs SI2337DS-T1-GE3CT-ND
P-Channel 80V 2.2A (Tc) 760mW (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)

P-Channel 80V 2.2A (Tc) 760mW (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Single FETs, MOSFETs - SI2337DS-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI2337DS-T1-GE3DKR-ND
Single FETs, MOSFETs SI2337DS-T1-GE3DKR-ND
P-Channel 80V 2.2A (Tc) 760mW (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)

P-Channel 80V 2.2A (Tc) 760mW (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
MOSFETs - 8123123 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
8123123
MOSFETs 8123123
Trans MOSFET P-CH 80V 1.2A 3-Pin

Trans MOSFET P-CH 80V 1.2A 3-Pin

Supplier's Site
MOSFETs - 8123123P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
8123123P
MOSFETs 8123123P
Trans MOSFET P-CH 80V 1.2A 3-Pin

Trans MOSFET P-CH 80V 1.2A 3-Pin

Supplier's Site
MOSFETs - 1657181 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1657181
MOSFETs 1657181
Trans MOSFET P-CH 80V 1.2A 3-Pin

Trans MOSFET P-CH 80V 1.2A 3-Pin

Supplier's Site
Singapore
80V 1.2A SOT-23 MOSFET Transistor
278-SI2337DS-T1-GE3
80V 1.2A SOT-23 MOSFET Transistor 278-SI2337DS-T1-GE3
P-CH MOSFET 80V 1.2A SOT-23 270mR Product overview: SI2337DS-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 1.2A, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 1.2A, SOT-23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2337DS-T1-GE3 can be used for catalog matching and distributor lookup.

P-CH MOSFET 80V 1.2A SOT-23 270mR Product overview: SI2337DS-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 1.2A, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 1.2A, SOT-23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2337DS-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - SI2337DS-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI2337DS-T1-GE3
Single FETs, MOSFETs SI2337DS-T1-GE3
MOSFET P-CH 80V 2.2A SOT23-3

MOSFET P-CH 80V 2.2A SOT23-3

Supplier's Site Datasheet
Mosfet, P-Ch, 80V, 2.2A, To-236; Channel Type Vishay - 61AC1930 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, 80V, 2.2A, To-236; Channel Type Vishay
61AC1930
Mosfet, P-Ch, 80V, 2.2A, To-236; Channel Type Vishay 61AC1930
MOSFET, P-CH, 80V, 2.2A, TO-236; Channel Type:P Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:2.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

MOSFET, P-CH, 80V, 2.2A, TO-236; Channel Type:P Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:2.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site Datasheet
P Channel Mosfet, -80V, 2.2A To-236; Channel Type Vishay - 15R4916 - Newark, An Avnet Company
Chicago, IL, United States
P Channel Mosfet, -80V, 2.2A To-236; Channel Type Vishay
15R4916
P Channel Mosfet, -80V, 2.2A To-236; Channel Type Vishay 15R4916
P CHANNEL MOSFET, -80V, 2.2A TO-236; Channel Type:P Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:2.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:6V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

P CHANNEL MOSFET, -80V, 2.2A TO-236; Channel Type:P Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:2.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:6V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET -80V Vds 20V Vgs SOT-23

MOSFET -80V Vds 20V Vgs SOT-23

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI2337DS-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI2337DS-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI2337DS-T1-GE3
MOSFET P-CH 80V 2.2A SOT23-3

MOSFET P-CH 80V 2.2A SOT23-3

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey RS Components, Ltd. RS Components, Ltd. ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) Newark, An Avnet Company Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 064398-SI2337DS-T1-GE3 SI2337DS-T1-GE3TR-ND 8123123 8123123P 278-SI2337DS-T1-GE3 SI2337DS-T1-GE3 61AC1930 15R4916 SI2337DS-T1-GE3 SI2337DS-T1-GE3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2337DS-T1-GE3 Single FETs, MOSFETs MOSFETs MOSFETs 80V 1.2A SOT-23 MOSFET Transistor Single FETs, MOSFETs Mosfet, P-Ch, 80V, 2.2A, To-236; Channel Type Vishay P Channel Mosfet, -80V, 2.2A To-236; Channel Type Vishay MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel P-Channel P-Channel P-Channel; P-Channel P-Channel
V(BR)DSS 80 volts 80 volts
PD 760 to 2500 milliwatts 760 milliwatts 760 milliwatts
TJ -50 to 150 C (-58 to 302 F) -55 C (-67 F) -50 to 150 C (-58 to 302 F)
Package Type SOT3; SOT23; SOT-23-3 (TO-236) SOT23; TO-236-3, SC-59, SOT-23-3 SOT23; Sot-23 (to-236) SOT23; SOT-23 SOT23; TO-236-3, SC-59, SOT-23-3 TO-3 TO-3 SOT23; TO-236-3, SC-59, SOT-23-3
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