P-CH MOSFET 80V 1.2A SOT-23 270mR Product overview: SI2337DS-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 1.2A, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 1.2A, SOT-23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2337DS-T1-GE3 can be used for catalog matching and distributor lookup.
P-Channel 80V 2.2A (Tc) 760mW (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)
P-Channel 80V 2.2A (Tc) 760mW (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)
P-Channel 80V 2.2A (Tc) 760mW (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)
Manufacturer: Vishay
Win Source Part Number: 064398-SI2337DS-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 760mW (Ta), 2.5W (Tc)
Family Name: Si2337DS
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -50°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 80V
Continuous Drain Current at 25°C: 2.2A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 17nC @ 10V
Max Input Capacitance: 500pF @ 40V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 270 mOhm @ 1.2A, 10V
Introduction Date: December 02, 2005
ECCN: EAR99
Country of Origin: China, Taiwan
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial, Power Management
MOSFET, P-CH, 80V, 2.2A, TO-236; Channel Type:P Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:2.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
P CHANNEL MOSFET, -80V, 2.2A TO-236; Channel Type:P Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:2.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:6V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MOSFET P-CH 80V 2.2A SOT23-3
MOSFET P-CH 80V 2.2A SOT23-3
MOSFET -80V Vds 20V Vgs SOT-23
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | Newark, An Avnet Company | Newark, An Avnet Company | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SI2337DS-T1-GE3 | SI2337DS-T1-GE3TR-ND | 064398-SI2337DS-T1-GE3 | 8123123 | 8123123P | 61AC1930 | 15R4916 | SI2337DS-T1-GE3 | SI2337DS-T1-GE3 | SI2337DS-T1-GE3 |
| Product Name | 80V 1.2A SOT-23 MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2337DS-T1-GE3 | MOSFETs | MOSFETs | Mosfet, P-Ch, 80V, 2.2A, To-236; Channel Type Vishay | P Channel Mosfet, -80V, 2.2A To-236; Channel Type Vishay | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | ||||
| PD | 760 milliwatts | 760 to 2500 milliwatts | 760 milliwatts | |||||||
| TJ | -55 C (-67 F) | -50 to 150 C (-58 to 302 F) | -50 to 150 C (-58 to 302 F) | |||||||
| Package Type | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT3; SOT23; SOT-23-3 (TO-236) | SOT23; Sot-23 (to-236) | SOT23; SOT-23 | TO-3 | TO-3 | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23; TO-236-3, SC-59, SOT-23-3 | ||
| V(BR)DSS | 80 volts | 80 volts |
