Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2337DS-T1-E3 SI2337DS-T1-E3

Manufacturer: Vishay
Win Source Part Number: 1095750-SI2337DS-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 760mW (Ta), 2.5W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -50°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 80V
Continuous Drain Current at 25°C: 2.2A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 17nC @ 10V
Max Input Capacitance: 500pF @ 40V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 270 mOhm @ 1.2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Limited

MOSFET P-CH 80V 2.2A SOT23-3

P-Channel 80V 2.2A (Tc) 760mW (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)

P-Channel 80V 2.2A (Tc) 760mW (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)

P-Channel 80V 2.2A (Tc) 760mW (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)

P-Channel MOSFET, 80V, 1.2A, 270mR, SOT-23-3 Product overview: SI2337DS-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 80V, 1.2A, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 1.2A, SOT-23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2337DS-T1-E3 can be used for catalog matching and distributor lookup.