P-channel MOSFET designed for surface mounting in power switching applications, housed in a SOT-23 (TO-236) package measuring 2.80 to 3.04 mm in length and 2.10 to 2.64 mm in width. It has a drain-source voltage rating of -80 V, a continuous drain current of -2.2 A at 25 °C, and a drain-source on-state resistance of 0.270 Ω at -10 V gate-source voltage. The device features a typical total gate charge of 11 nC and complies with RoHS and halogen-free standards. It is qualified under AEC-Q200 for automotive applications and has an operating junction temperature range of -50 °C to +150 °C.
P CHANNEL MOSFET, -80V, 2.2A TO-236, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:2.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:6V; Gate Source Threshold Voltage Max:4V RoHS Compliant: No
| Newark, An Avnet Company | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 28AC2128 |
| Product Name | P Channel Mosfet, -80V, 2.2A To-236, Full Reel; Channel Type Vishay |
| Polarity | P-Channel |