Vishay Precision Group Single FETs, MOSFETs SI2336DS-T1-GE3

Description
N-Channel 30V 5.2A (Tc) 1.25W (Ta), 1.8W (Tc) Surface Mount SOT-23-3 (TO-236)
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Description
N-Channel 30V 5.2A (Tc) 1.25W (Ta), 1.8W (Tc) Surface Mount SOT-23-3 (TO-236)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SI2336DS-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI2336DS-T1-GE3CT-ND
Single FETs, MOSFETs SI2336DS-T1-GE3CT-ND
N-Channel 30V 5.2A (Tc) 1.25W (Ta), 1.8W (Tc) Surface Mount SOT-23-3 (TO-236)

N-Channel 30V 5.2A (Tc) 1.25W (Ta), 1.8W (Tc) Surface Mount SOT-23-3 (TO-236)

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Single FETs, MOSFETs - SI2336DS-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI2336DS-T1-GE3TR-ND
Single FETs, MOSFETs SI2336DS-T1-GE3TR-ND
N-Channel 30V 5.2A (Tc) 1.25W (Ta), 1.8W (Tc) Surface Mount SOT-23-3 (TO-236)

N-Channel 30V 5.2A (Tc) 1.25W (Ta), 1.8W (Tc) Surface Mount SOT-23-3 (TO-236)

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Single FETs, MOSFETs - SI2336DS-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI2336DS-T1-GE3DKR-ND
Single FETs, MOSFETs SI2336DS-T1-GE3DKR-ND
N-Channel 30V 5.2A (Tc) 1.25W (Ta), 1.8W (Tc) Surface Mount SOT-23-3 (TO-236)

N-Channel 30V 5.2A (Tc) 1.25W (Ta), 1.8W (Tc) Surface Mount SOT-23-3 (TO-236)

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2336DS-T1-GE3 - 1095749-SI2336DS-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2336DS-T1-GE3
1095749-SI2336DS-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2336DS-T1-GE3 1095749-SI2336DS-T1-GE3
Manufacturer: Vishay Win Source Part Number: 1095749-SI2336DS-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.25W (Ta), 1.8W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 5.2A (Tc) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 15nC @ 8V Max Input Capacitance: 560pF @ 15V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 42 mOhm @ 3.8A, 4.5V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Sufficient

Manufacturer: Vishay
Win Source Part Number: 1095749-SI2336DS-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.25W (Ta), 1.8W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 5.2A (Tc)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 15nC @ 8V
Max Input Capacitance: 560pF @ 15V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 42 mOhm @ 3.8A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Singapore
30V 5.2A SOT-23 MOSFET Transistor
278-SI2336DS-T1-GE3
30V 5.2A SOT-23 MOSFET Transistor 278-SI2336DS-T1-GE3
N-CH MOSFET, 30V, 5.2A, 42mR, SOT-23, SM Product overview: SI2336DS-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 5.2A, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 5.2A, SOT-23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2336DS-T1-GE3 can be used for catalog matching and distributor lookup.

N-CH MOSFET, 30V, 5.2A, 42mR, SOT-23, SM Product overview: SI2336DS-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 5.2A, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 5.2A, SOT-23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2336DS-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - SI2336DS-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI2336DS-T1-GE3
Single FETs, MOSFETs SI2336DS-T1-GE3
MOSFET N-CH 30V 5.2A SOT23-3

MOSFET N-CH 30V 5.2A SOT23-3

Supplier's Site Datasheet
Mosfet, N Channel, 30V, 5.2A, Sot-23-3, Full Reel; Channel Type Vishay - 65T1688 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 30V, 5.2A, Sot-23-3, Full Reel; Channel Type Vishay
65T1688
Mosfet, N Channel, 30V, 5.2A, Sot-23-3, Full Reel; Channel Type Vishay 65T1688
MOSFET, N CHANNEL, 30V, 5.2A, SOT-23-3, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:5.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Power Dissipation:1.8W RoHS Compliant: Yes

MOSFET, N CHANNEL, 30V, 5.2A, SOT-23-3, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:5.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Power Dissipation:1.8W RoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet, N-Ch, 30V, 5.2A, 150Deg C, 1.8W; Channel Type Vishay - 23T8500 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 30V, 5.2A, 150Deg C, 1.8W; Channel Type Vishay
23T8500
Mosfet, N-Ch, 30V, 5.2A, 150Deg C, 1.8W; Channel Type Vishay 23T8500
MOSFET, N-CH, 30V, 5.2A, 150DEG C, 1.8W; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:5.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:400mV RoHS Compliant: Yes

MOSFET, N-CH, 30V, 5.2A, 150DEG C, 1.8W; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:5.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:400mV RoHS Compliant: Yes

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 30V Vds 8V Vgs SOT-23

MOSFET 30V Vds 8V Vgs SOT-23

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI2336DS-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI2336DS-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI2336DS-T1-GE3
MOSFET N-CH 30V 5.2A SOT23-3

MOSFET N-CH 30V 5.2A SOT23-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) Newark, An Avnet Company Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SI2336DS-T1-GE3CT-ND 1095749-SI2336DS-T1-GE3 278-SI2336DS-T1-GE3 SI2336DS-T1-GE3 65T1688 23T8500 SI2336DS-T1-GE3 SI2336DS-T1-GE3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2336DS-T1-GE3 30V 5.2A SOT-23 MOSFET Transistor Single FETs, MOSFETs Mosfet, N Channel, 30V, 5.2A, Sot-23-3, Full Reel; Channel Type Vishay Mosfet, N-Ch, 30V, 5.2A, 150Deg C, 1.8W; Channel Type Vishay MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel
Package Type SOT23; TO-236-3, SC-59, SOT-23-3 SOT3; SOT23; SOT-23-3 (TO-236) SOT23; TO-236-3, SC-59, SOT-23-3 TO-3; SOT23 TO-3 SOT23; TO-236-3, SC-59, SOT-23-3
V(BR)DSS 30 volts 30 volts
PD 1250 to 1800 milliwatts 1800 milliwatts 1250 milliwatts 1800 milliwatts
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