Vishay Intertechnology, Inc. Small Signal Field-Effect Transistor, 3.2A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, 3 PIN SI2335DS-T1

Description
Small Signal Field-Effect Transistor, 3.2A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, 3 PIN
Description
Small Signal Field-Effect Transistor, 3.2A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, 3 PIN

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Small Signal Field-Effect Transistor, 3.2A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, 3 PIN - 866-SI2335DS-T1 - Utmel Electronic Limited
Hong Kong, China
Small Signal Field-Effect Transistor, 3.2A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, 3 PIN
866-SI2335DS-T1
Small Signal Field-Effect Transistor, 3.2A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, 3 PIN 866-SI2335DS-T1
Small Signal Field-Effect Transistor, 3.2A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, 3 PIN

Small Signal Field-Effect Transistor, 3.2A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, 3 PIN

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Technical Specifications

  Utmel Electronic Limited
Product Category Transistors
Product Number 866-SI2335DS-T1
Product Name Small Signal Field-Effect Transistor, 3.2A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, 3 PIN
Polarity P-Channel
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