P-CH JFET, 4.1A, -12V, 32mR, TO-236, Small Signal Product overview: SI2333DS-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 4.1A, -12V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 4.1A, -12V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2333DS-T1-E3 can be used for catalog matching and distributor lookup.
MOSFET P-CH 12V 4.1A SOT23-3
Manufacturer: Vishay
Win Source Part Number: 028390-SI2333DS-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 750mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 4.1A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 18nC @ 4.5V
Max Input Capacitance: 1100pF @ 6V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 32 mOhm @ 5.3A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management
P-Channel 12V 4.1A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
P-Channel 12V 4.1A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
P-Channel 12V 4.1A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
P CHANNEL MOSFET, -12V, 4.1A TO-236; Channel Type:P Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:4.1A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes
P CHANNEL MOSFET, -12V, 4.1A TO-236, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:4.1A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Power Dissipation:1.25W RoHS Compliant: Yes
MOSFET, Power;P-Ch;VDSS -12V;RDS(ON) 0.025Ohm;ID -4.1A;TO-236 (SOT-23);PD 0.75W
MOSFET 12V 5.3A 1.25W 32 mohms @ 4.5V
MOSFET P-CH 12V 4.1A SOT23-3
12V 4.1A 750mW 32mΩ@4.5V,5.3A 1V@250uA P Channel SOT-23 MOSFETs ROHS
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | DigiKey | Newark, An Avnet Company | Newark, An Avnet Company | Allied Electronics, Inc. | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SI2333DS-T1-E3 | SI2333DS-T1-E3 | 028390-SI2333DS-T1-E3 | SI2333DS-T1-E3TR-ND | 06J7587 | 71T8047 | 70026098 | SI2333DS-T1-E3 | SI2333DS-T1-E3 | SI2333DS-T1-E3 |
| Product Name | 4.1A -12V MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2333DS-T1-E3 | Single FETs, MOSFETs | P Channel Mosfet, -12V, 4.1A To-236; Channel Type Vishay | P Channel Mosfet, -12V, 4.1A To-236, Full Reel; Channel Type Vishay | MOSFET, Power;P-Ch;VDSS -12V;RDS(ON) 0.025Ohm;ID -4.1A;TO-236 (SOT-23);PD 0.75W | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | ||
| PD | 750 milliwatts | 750 milliwatts | 750 milliwatts | 1250 milliwatts | 750 milliwatts | 750 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||||
| V(BR)DSS | 12 volts | 12 volts | -12 volts | 12 volts |
