Vishay Precision Group Single FETs, MOSFETs SI2333DDS-T1-GE3

Description
MOSFET P-CH 12V 6A SOT23-3
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Description
MOSFET P-CH 12V 6A SOT23-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SI2333DDS-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI2333DDS-T1-GE3
Single FETs, MOSFETs SI2333DDS-T1-GE3
MOSFET P-CH 12V 6A SOT23-3

MOSFET P-CH 12V 6A SOT23-3

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2333DDS-T1-GE3 - 1095746-SI2333DDS-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2333DDS-T1-GE3
1095746-SI2333DDS-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2333DDS-T1-GE3 1095746-SI2333DDS-T1-GE3
Manufacturer: Vishay Win Source Part Number: 1095746-SI2333DDS-T1 -GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.2W (Ta), 1.7W (Tc) Family Name: Si2333DDS Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 6A (Tc) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 35nC @ 8V Max Input Capacitance: 1275pF @ 6V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 28 mOhm @ 5A, 4.5V Alternative Parts (Cross-Reference): DMP1045U-7; RZR040P01TL; RQ5A040ZPTL; Introduction Date: October 11, 2012 ECCN: EAR99 Estimated EOL Date: 2026 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 1095746-SI2333DDS-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.2W (Ta), 1.7W (Tc)
Family Name: Si2333DDS
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 6A (Tc)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 35nC @ 8V
Max Input Capacitance: 1275pF @ 6V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 28 mOhm @ 5A, 4.5V
Alternative Parts (Cross-Reference): DMP1045U-7; RZR040P01TL; RQ5A040ZPTL;
Introduction Date: October 11, 2012
ECCN: EAR99
Estimated EOL Date: 2026
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
MOSFETs - 7879222P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
7879222P
MOSFETs 7879222P
MOSFET P-Ch 12V 5A TrenchFET SOT23

MOSFET P-Ch 12V 5A TrenchFET SOT23

Supplier's Site
MOSFETs - 7879222 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
7879222
MOSFETs 7879222
MOSFET P-Ch 12V 5A TrenchFET SOT23

MOSFET P-Ch 12V 5A TrenchFET SOT23

Supplier's Site
MOSFETs - 9194220 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
9194220
MOSFETs 9194220
MOSFET P-Ch 12V 5A TrenchFET SOT23

MOSFET P-Ch 12V 5A TrenchFET SOT23

Supplier's Site
Single FETs, MOSFETs - SI2333DDS-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI2333DDS-T1-GE3TR-ND
Single FETs, MOSFETs SI2333DDS-T1-GE3TR-ND
P-Channel 12V 6A (Tc) 1.2W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)

P-Channel 12V 6A (Tc) 1.2W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Single FETs, MOSFETs - SI2333DDS-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI2333DDS-T1-GE3DKR-ND
Single FETs, MOSFETs SI2333DDS-T1-GE3DKR-ND
P-Channel 12V 6A (Tc) 1.2W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)

P-Channel 12V 6A (Tc) 1.2W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Single FETs, MOSFETs - SI2333DDS-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI2333DDS-T1-GE3CT-ND
Single FETs, MOSFETs SI2333DDS-T1-GE3CT-ND
P-Channel 12V 6A (Tc) 1.2W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)

P-Channel 12V 6A (Tc) 1.2W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI2333DDS-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI2333DDS-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI2333DDS-T1-GE3
MOSFET P-CH 12V 6A SOT23-3

MOSFET P-CH 12V 6A SOT23-3

Supplier's Site
Mosfet Transistor, P Channel, -6 A, -12 V, 0.023 Ohm, -4.5 V, 400 Mv Rohs Compliant Vishay - 62W0564 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, P Channel, -6 A, -12 V, 0.023 Ohm, -4.5 V, 400 Mv Rohs Compliant Vishay
62W0564
Mosfet Transistor, P Channel, -6 A, -12 V, 0.023 Ohm, -4.5 V, 400 Mv Rohs Compliant Vishay 62W0564
MOSFET Transistor, P Channel, -6 A, -12 V, 0.023 ohm, -4.5 V, 400 mV RoHS Compliant: Yes

MOSFET Transistor, P Channel, -6 A, -12 V, 0.023 ohm, -4.5 V, 400 mV RoHS Compliant: Yes

Supplier's Site Datasheet
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
SI2333DDS-T1-GE3
Triode/MOS Tube/Transistor >> MOSFETs SI2333DDS-T1-GE3
12V 6A 28mΩ@4.5V,5A 1V@250uA P Channel SOT-23 MOSFETs ROHS

12V 6A 28mΩ@4.5V,5A 1V@250uA P Channel SOT-23 MOSFETs ROHS

Supplier's Site Datasheet
MOSFET -12V Vds 8V Vgs SOT-23

MOSFET -12V Vds 8V Vgs SOT-23

Buy Now Datasheet

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics RS Components, Ltd. RS Components, Ltd. DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company LCSC Electronics Technology (HK) Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number SI2333DDS-T1-GE3 1095746-SI2333DDS-T1-GE3 7879222P 7879222 SI2333DDS-T1-GE3TR-ND SI2333DDS-T1-GE3 62W0564 SI2333DDS-T1-GE3 SI2333DDS-T1-GE3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2333DDS-T1-GE3 MOSFETs MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet Transistor, P Channel, -6 A, -12 V, 0.023 Ohm, -4.5 V, 400 Mv Rohs Compliant Vishay Triode/MOS Tube/Transistor >> MOSFETs MOSFET
Polarity P-Channel; P-Channel P-Channel; P-Channel P-Channel P-Channel P-Channel P-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 12 volts 12 volts 12 volts
IDSS 6000 milliamps
PD 1200 milliwatts 1200 to 1700 milliwatts 1200 milliwatts
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