MOSFET P-CH 12V 6A SOT23-3
MOSFET P-Ch 12V 5A TrenchFET SOT23
MOSFET P-Ch 12V 5A TrenchFET SOT23
MOSFET P-Ch 12V 5A TrenchFET SOT23
P-Channel 12V 6A (Tc) 1.2W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)
P-Channel 12V 6A (Tc) 1.2W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)
P-Channel 12V 6A (Tc) 1.2W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)
Manufacturer: Vishay
Win Source Part Number: 1095746-SI2333DDS-T1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.2W (Ta), 1.7W (Tc)
Family Name: Si2333DDS
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 6A (Tc)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 35nC @ 8V
Max Input Capacitance: 1275pF @ 6V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 28 mOhm @ 5A, 4.5V
Alternative Parts (Cross-Reference): DMP1045U-7; RZR040P01TL; RQ5A040ZPTL;
Introduction Date: October 11, 2012
ECCN: EAR99
Estimated EOL Date: 2026
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Balance
MOSFET -12V Vds 8V Vgs SOT-23
MOSFET Transistor, P Channel, -6 A, -12 V, 0.023 ohm, -4.5 V, 400 mV RoHS Compliant: Yes
MOSFET P-CH 12V 6A SOT23-3
12V 6A 28mΩ@4.5V,5A 1V@250uA P Channel SOT-23 MOSFETs ROHS
| ODG (Origin Data Global) | RS Components, Ltd. | RS Components, Ltd. | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI2333DDS-T1-GE3 | 7879222P | 7879222 | SI2333DDS-T1-GE3TR-ND | 1095746-SI2333DDS-T1-GE3 | SI2333DDS-T1-GE3 | 62W0564 | SI2333DDS-T1-GE3 | SI2333DDS-T1-GE3 |
| Product Name | Single FETs, MOSFETs | MOSFETs | MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2333DDS-T1-GE3 | MOSFET | Mosfet Transistor, P Channel, -6 A, -12 V, 0.023 Ohm, -4.5 V, 400 Mv Rohs Compliant Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||
| V(BR)DSS | 12 volts | 12 volts | 12 volts | ||||||
| IDSS | 6000 milliamps | ||||||||
| PD | 1200 milliwatts | 1200 to 1700 milliwatts | 1200 milliwatts |