Manufacturer: Vishay
Win Source Part Number: 094294-SI2333CDS-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Family Name: Si2333CDS
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 7.1A (Tc)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 25nC @ 4.5V
Max Input Capacitance: 1225pF @ 6V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 35 mOhm @ 5.1A, 4.5V
Alternative Parts (Cross-Reference): IRLML6401GPBF; IRLML6401TRGPBF; 2SJ621-T2B;
Introduction Date: January 20, 2009
ECCN: EAR99
Estimated EOL Date: 2019
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Balance
P-Channel 12V 7.1A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)
P-Channel 12V 7.1A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)
P-Channel 12V 7.1A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)
MOSFET P-CH 12V 7.1A SOT23-3
P-CH MOSFET, 12V, 5.1A, 35mR, SOT-23, Small Signal Product overview: SI2333CDS-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 5.1A, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 5.1A, SOT-23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2333CDS-T1-GE3
MOSFET, P CHANNEL, -12V, -7.1A, SOT-23-3, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:7.1A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Power Dissipation:2.5W; MSL:- RoHS Compliant: Yes
MOSFET 12V 5.1A 2.5W 35 mohms @ 4.5V
MOSFET P-CH 12V 7.1A SOT23-3
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 094294-SI2333CDS-T1-GE3 | SI2333CDS-T1-GE3DKR-ND | SI2333CDS-T1-GE3 | 278-SI2333CDS-T1-GE3 | 29X0526 | SI2333CDS-T1-GE3 | SI2333CDS-T1-GE3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2333CDS-T1-GE3 | Single FETs, MOSFETs | Single FETs, MOSFETs | 12V 5.1A SOT-23 MOSFET Transistor | Mosfet, P Channel, -12V, -7.1A, Sot-23-3, Full Reel; Channel Type Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | ||
| V(BR)DSS | 12 volts | 12 volts | |||||
| PD | 1250 to 2500 milliwatts | 1250 milliwatts | 2500 milliwatts | 2500 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) |
