MOSFET P-CH 12V 7.1A SOT23-3
Manufacturer: Vishay
Win Source Part Number: 028389-SI2333CDS-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 7.1A (Tc)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 25nC @ 4.5V
Max Input Capacitance: 1225pF @ 6V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 35 mOhm @ 5.1A, 4.5V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Limited
P-Channel 12V 7.1A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)
P-Channel 12V 7.1A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)
P-Channel 12V 7.1A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)
MOSFET, P CHANNEL, -12V, -7.1A, TO-236-3; Channel Type:P Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:7.1A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:400mV RoHS Compliant: Yes
MOSFET, P CHANNEL, -12V, -7.1A, TO-236-3, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:7.1A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Power Dissipation:2.5W; MSL:- RoHS Compliant: Yes
12V 7.1A 35mΩ@4.5V,5.1A 1V@250uA P Channel SOT-23 MOSFETs ROHS
MOSFET 12V 5.1A 2.5W 35mohm @ 4.5V
MOSFET P-CH 12V 7.1A SOT23-3
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Newark, An Avnet Company | Newark, An Avnet Company | LCSC Electronics Technology (HK) Limited | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SI2333CDS-T1-E3 | 028389-SI2333CDS-T1-E3 | SI2333CDS-T1-E3CT-ND | 88T7691 | 33P5183 | SI2333CDS-T1-E3 | SI2333CDS-T1-E3 | SI2333CDS-T1-E3 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2333CDS-T1-E3 | Single FETs, MOSFETs | Mosfet, P Channel, -12V, -7.1A, To-236-3; Channel Type Vishay | Mosfet, P Channel, -12V, -7.1A, To-236-3, Full Reel; Channel Type Vishay | Triode/MOS Tube/Transistor >> MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 12 volts | 12 volts | 12 volts | |||||
| IDSS | 7100 milliamps | 7100 milliamps | 7100 milliamps | |||||
| PD | 1250 milliwatts | 1250 to 2500 milliwatts | 2500 milliwatts | 1250 milliwatts |
