Vishay Precision Group P-Channel SMD 5.1A -12V MOSFET Transistor SI2333CDS-T1-E3

P-Channel JFET, 5.1A, -12V, 35mR, SOT-23-3, Surface Mount Product overview: SI2333CDS-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, SMD, 5.1A, -12V, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 5.1A, -12V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2333CDS-T1-E3 can be used for catalog matching and distributor lookup.

P-Channel 12V 7.1A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)

P-Channel 12V 7.1A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)

P-Channel 12V 7.1A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)

MOSFET P-CH 12V 7.1A SOT23-3

Manufacturer: Vishay
Win Source Part Number: 028389-SI2333CDS-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 7.1A (Tc)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 25nC @ 4.5V
Max Input Capacitance: 1225pF @ 6V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 35 mOhm @ 5.1A, 4.5V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Limited