Manufacturer: Vishay
Win Source Part Number: 1095745-SI2331DS-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 710mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 3.2A (Ta)
Gate-Source Threshold Voltage: 900mV @ 250μA
Max Gate Charge: 14nC @ 4.5V
Max Input Capacitance: 780pF @ 6V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 48 mOhm @ 3.6A, 4.5V
Alternative Parts (Cross-Reference): DMG3415U-7; Si2323DDS-T1-GE3; Si2331DS-E3;
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Sufficient
MOSFET P-CH 12V 3.2A SOT23-3
| Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1095745-SI2331DS-T1-GE3 | SI2331DS-T1-GE3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2331DS-T1-GE3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; P-Channel | |
| V(BR)DSS | 12 volts | |
| PD | 710 milliwatts |
