Manufacturer: Vishay
Win Source Part Number: 064396-SI2328DS-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 730mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 1.15A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 5nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 250 mOhm @ 1.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Limited
N-Channel 100V 1.15A (Ta) 730mW (Ta) Surface Mount SOT-23-3 (TO-236)
N-Channel 100V 1.15A (Ta) 730mW (Ta) Surface Mount SOT-23-3 (TO-236)
N-Channel 100V 1.15A (Ta) 730mW (Ta) Surface Mount SOT-23-3 (TO-236)
MOSFET N-CH 100V 1.15A SOT23-3
MOSFET N-CH 100V 1.15A SOT23-3
MOSFET 100V Vds 20V Vgs SOT-23
MOSFET Transistor, N Channel, 1.5 A, 100 V, 195 mohm, 10 V, 4 V RoHS Compliant: Yes
N CH MOSFET, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:1.15A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; No. of Pins:3Pins RoHS Compliant: Yes
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 064396-SI2328DS-T1-GE3 | SI2328DS-T1-GE3TR-ND | SI2328DS-T1-GE3 | SI2328DS-T1-GE3 | SI2328DS-T1-GE3 | 63W4142 | 15R4913 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2328DS-T1-GE3 | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet Transistor, N Channel, 1.5 A, 100 V, 195 Mohm, 10 V, 4 V Rohs Compliant Vishay | N Ch Mosfet, Full Reel; Channel Type Vishay |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| V(BR)DSS | 100 volts | 100 volts | |||||
| PD | 730 milliwatts | 730 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
