MOSFET P-CH 200V 380MA SOT23-3 Product overview: SI2327DS-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 380MA, SOT23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 380MA, SOT23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2327DS-T1-E3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 1095742-SI2327DS-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 750mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 380mA (Ta)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 12nC @ 10V
Max Input Capacitance: 510pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.35 Ohm @ 500mA, 10V
Alternative Parts (Cross-Reference): SI2327DS-T1-GE3; VP1220N1; Si2327DS-T1-E3; SI2325DS -T1-GE3;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance
MOSFET P-CH 200V 380MA SOT23-3
MOSFET P-CH 200V 0.38A SOT23-3
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SI2327DS-T1-E3 | 1095742-SI2327DS-T1-E3 | SI2327DS-T1-E3 | 880-SI2327DS-T1-E3 |
| Product Name | 200V 380MA SOT23 MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2327DS-T1-E3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET P-CH 200V 0.38A SOT23-3 |
| PD | 750 milliwatts | 750 milliwatts | 750 milliwatts | |
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |
| Package Type | Tape & Reel (TR) | SOT3; SOT23; SOT-23-3 (TO-236) | SOT23; TO-236-3, SC-59, SOT-23-3 | |
| Packing Method | Tape & Reel (TR) | Tape Reel; Reel - TR | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR | Tape Reel; Tape & Reel (TR) |
| Polarity | P-Channel; P-Channel |
