Vishay Precision Group -150V 530mA SOT-23 MOSFET Transistor SI2325DS-T1-GE3

P-CH JFET, -150V Vds, 530mA Id, 1.2R Rds(on), SOT-23, SM Product overview: SI2325DS-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -150V, 530mA, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -150V, 530mA, SOT-23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2325DS-T1-GE3 can be used for catalog matching and distributor lookup.

MOSFET P-CH 150V 530MA SOT23-3

Manufacturer: Vishay
Win Source Part Number: 1095741-SI2325DS-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 750mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 530mA (Ta)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 12nC @ 10V
Max Input Capacitance: 510pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.2 Ohm @ 500mA, 10V
Alternative Parts (Cross-Reference): SI2327DS-T1-GE3; VP1220N1; Si2327DS-T1-E3; SI2325DS -T1-GE3;
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Sufficient

P-Channel 150V 530mA (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

P-Channel 150V 530mA (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

P-Channel 150V 530mA (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)