MOSFET P-CH 150V 530MA SOT23-3
Manufacturer: Vishay
Win Source Part Number: 1095741-SI2325DS-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 750mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 530mA (Ta)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 12nC @ 10V
Max Input Capacitance: 510pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.2 Ohm @ 500mA, 10V
Alternative Parts (Cross-Reference): SI2327DS-T1-GE3; VP1220N1; Si2327DS-T1-E3; SI2325DS -T1-GE3;
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Sufficient
P-Channel 150V 530mA (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
P-Channel 150V 530mA (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
P-Channel 150V 530mA (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
MOSFET P-CH 150V 530MA SOT23-3
MOSFET -150V Vds 20V Vgs SOT-23
MOSFET P-CH 150V 0.53A SOT-23
150V 530mA 750mW 1.2Ω@10V,500mA 4.5V@250uA P Channel SOT-23 MOSFETs ROHS
MOSFET, P-CH, 150V, 0.53A, TO-236; Channel Type:P Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:530mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes
P CH MOSFET, -150V, 690mA, TO-236; Channel Type:P Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:530mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Utmel Electronic Limited | LCSC Electronics Technology (HK) Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI2325DS-T1-GE3 | 1095741-SI2325DS-T1-GE3 | SI2325DS-T1-GE3DKR-ND | SI2325DS-T1-GE3 | SI2325DS-T1-GE3 | 880-SI2325DS-T1-GE3 | SI2325DS-T1-GE3 | 01AC9540 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2325DS-T1-GE3 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | MOSFET P-CH 150V 0.53A SOT-23 | Triode/MOS Tube/Transistor >> MOSFETs | Mosfet, P-Ch, 150V, 0.53A, To-236; Channel Type Vishay |
| Polarity | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON | ||||||
| V(BR)DSS | 150 volts | 150 volts | -150 volts | 150 volts | ||||
| IDSS | 530 milliamps | 530 milliamps | ||||||
| PD | 750 milliwatts | 750 milliwatts | 750 milliwatts | 750 milliwatts |
