Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2324DS-T1-GE3 SI2324DS-T1-GE3

Description
Manufacturer: Vishay Win Source Part Number: 042586-SI2324DS-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc) Family Name: Si2324DS Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 2.3A (Tc) Gate-Source Threshold Voltage: 2.9V @ 250μA Max Gate Charge: 10.4nC @ 10V Max Input Capacitance: 190pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 234 mOhm @ 1.5A, 10V Alternative Parts (Cross-Reference): TSM2328CX RFG; AP2330GN-HF-3TR; CPH3412; DMN10H220L-7; Introduction Date: May 05, 2011 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 042586-SI2324DS-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc) Family Name: Si2324DS Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 2.3A (Tc) Gate-Source Threshold Voltage: 2.9V @ 250μA Max Gate Charge: 10.4nC @ 10V Max Input Capacitance: 190pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 234 mOhm @ 1.5A, 10V Alternative Parts (Cross-Reference): TSM2328CX RFG; AP2330GN-HF-3TR; CPH3412; DMN10H220L-7; Introduction Date: May 05, 2011 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2324DS-T1-GE3 - 042586-SI2324DS-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2324DS-T1-GE3
042586-SI2324DS-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2324DS-T1-GE3 042586-SI2324DS-T1-GE3
Manufacturer: Vishay Win Source Part Number: 042586-SI2324DS-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc) Family Name: Si2324DS Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 2.3A (Tc) Gate-Source Threshold Voltage: 2.9V @ 250μA Max Gate Charge: 10.4nC @ 10V Max Input Capacitance: 190pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 234 mOhm @ 1.5A, 10V Alternative Parts (Cross-Reference): TSM2328CX RFG; AP2330GN-HF-3TR; CPH3412; DMN10H220L-7; Introduction Date: May 05, 2011 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 042586-SI2324DS-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Family Name: Si2324DS
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 2.3A (Tc)
Gate-Source Threshold Voltage: 2.9V @ 250μA
Max Gate Charge: 10.4nC @ 10V
Max Input Capacitance: 190pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 234 mOhm @ 1.5A, 10V
Alternative Parts (Cross-Reference): TSM2328CX RFG; AP2330GN-HF-3TR; CPH3412; DMN10H220L-7;
Introduction Date: May 05, 2011
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - SI2324DS-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI2324DS-T1-GE3
Single FETs, MOSFETs SI2324DS-T1-GE3
MOSFET N-CH 100V 2.3A SOT23-3

MOSFET N-CH 100V 2.3A SOT23-3

Supplier's Site Datasheet
Single FETs, MOSFETs - SI2324DS-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI2324DS-T1-GE3TR-ND
Single FETs, MOSFETs SI2324DS-T1-GE3TR-ND
N-Channel 100V 2.3A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)

N-Channel 100V 2.3A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Single FETs, MOSFETs - SI2324DS-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI2324DS-T1-GE3DKR-ND
Single FETs, MOSFETs SI2324DS-T1-GE3DKR-ND
N-Channel 100V 2.3A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)

N-Channel 100V 2.3A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Single FETs, MOSFETs - SI2324DS-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI2324DS-T1-GE3CT-ND
Single FETs, MOSFETs SI2324DS-T1-GE3CT-ND
N-Channel 100V 2.3A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)

N-Channel 100V 2.3A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Singapore
100V 2.3A SOT-23 MOSFET Transistor
278-SI2324DS-T1-GE3
100V 2.3A SOT-23 MOSFET Transistor 278-SI2324DS-T1-GE3
Trans MOSFET N-CH 100V 2.3A 3-Pin SOT-23 T/R Product overview: SI2324DS-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 2.3A, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 2.3A, SOT-23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2324DS-T1-GE3 can be used for catalog matching and distributor lookup.

Trans MOSFET N-CH 100V 2.3A 3-Pin SOT-23 T/R Product overview: SI2324DS-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 2.3A, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 2.3A, SOT-23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2324DS-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
SI2324DS-T1-GE3
Triode/MOS Tube/Transistor >> MOSFETs SI2324DS-T1-GE3
SOT-23 MOSFETs ROHS

SOT-23 MOSFETs ROHS

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI2324DS-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI2324DS-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI2324DS-T1-GE3
MOSFET N-CH 100V 2.3A SOT23-3

MOSFET N-CH 100V 2.3A SOT23-3

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 100V Vds 20V Vgs SOT-23

MOSFET 100V Vds 20V Vgs SOT-23

Buy Now Datasheet
Mosfet, N-Ch, 100V, 2.3A, Sot-23 Rohs Compliant Vishay - 57AJ0430 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 100V, 2.3A, Sot-23 Rohs Compliant Vishay
57AJ0430
Mosfet, N-Ch, 100V, 2.3A, Sot-23 Rohs Compliant Vishay 57AJ0430
MOSFET, N-CH, 100V, 2.3A, SOT-23 ROHS COMPLIANT: YES

MOSFET, N-CH, 100V, 2.3A, SOT-23 ROHS COMPLIANT: YES

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey ERSAELECTRONICS PTE. LTD. LCSC Electronics Technology (HK) Limited Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 042586-SI2324DS-T1-GE3 SI2324DS-T1-GE3 SI2324DS-T1-GE3TR-ND 278-SI2324DS-T1-GE3 SI2324DS-T1-GE3 SI2324DS-T1-GE3 SI2324DS-T1-GE3 57AJ0430
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2324DS-T1-GE3 Single FETs, MOSFETs Single FETs, MOSFETs 100V 2.3A SOT-23 MOSFET Transistor Triode/MOS Tube/Transistor >> MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, N-Ch, 100V, 2.3A, Sot-23 Rohs Compliant Vishay
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 100 volts 100 volts
PD 1250 to 2500 milliwatts 1250 milliwatts 2500 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 C (-67 F)
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