MOSFET P-CH 20V 5.3A SOT-23
Small Signal Field-Effect Transistor, 5.3A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN Product overview: SI2323DDS-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 5.3A, 20V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 5.3A, 20V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2323DDS-T1-GE3
P-Channel 20V 5.3A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23
P-Channel 20V 5.3A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23
P-Channel 20V 5.3A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23
Manufacturer: Vishay
Win Source Part Number: 093470-SI2323DDS-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 5.3A (Tc)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 36nC @ 8V
Max Input Capacitance: 1160pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 39 mOhm @ 4.1A, 4.5V
Alternative Parts (Cross-Reference): DMG3415U-7; Si2331DS-T1-GE3; Si2331DS-E3;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Limited
MOSFET, P-CH, -20V, -5.3A, SOT-23; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:5.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1V; MSL:- RoHS Compliant: Yes
MOSFET, P-CH, -20V, -5.3A, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-5.3A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.032ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-1V; Power RoHS Compliant: Yes
MOSFET -20V Vds 8V Vgs SOT-23
MOSFET P-CH 20V 5.3A SOT-23
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SI2323DDS-T1-GE3 | 278-SI2323DDS-T1-GE3 | SI2323DDS-T1-GE3DKR-ND | 093470-SI2323DDS-T1-GE3 | 70AC6494 | 01AC4978 | SI2323DDS-T1-GE3 | SI2323DDS-T1-GE3 |
| Product Name | Single FETs, MOSFETs | P-Channel 5.3A 20V MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2323DDS-T1-GE3 | Mosfet, P-Ch, -20V, -5.3A, Sot-23; Channel Type Vishay | Mosfet, P-Ch, -20V, -5.3A, Sot-23; Transistor Polarity Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 20 volts | 20 volts | ||||||
| IDSS | 5300 milliamps | 5300 milliamps | -5300 milliamps | |||||
| PD | 960 milliwatts | 1700 milliwatts | 960 to 1700 milliwatts |
