P-Channel 20V 5.3A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23
P-Channel 20V 5.3A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23
P-Channel 20V 5.3A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23
Manufacturer: Vishay
Win Source Part Number: 093470-SI2323DDS-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 5.3A (Tc)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 36nC @ 8V
Max Input Capacitance: 1160pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 39 mOhm @ 4.1A, 4.5V
Alternative Parts (Cross-Reference): DMG3415U-7; Si2331DS-T1-GE3; Si2331DS-E3;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Limited
MOSFET P-CH 20V 5.3A SOT-23
MOSFET, P-CH, -20V, -5.3A, SOT-23; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:5.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1V; MSL:- RoHS Compliant: Yes
MOSFET, P-CH, -20V, -5.3A, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-5.3A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.032ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-1V; Power RoHS Compliant: Yes
MOSFET P-CH 20V 5.3A SOT-23
MOSFET -20V Vds 8V Vgs SOT-23
| DigiKey | Win Source Electronics | ODG (Origin Data Global) | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI2323DDS-T1-GE3DKR-ND | 093470-SI2323DDS-T1-GE3 | SI2323DDS-T1-GE3 | 70AC6494 | 01AC4978 | SI2323DDS-T1-GE3 | SI2323DDS-T1-GE3 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2323DDS-T1-GE3 | Single FETs, MOSFETs | Mosfet, P-Ch, -20V, -5.3A, Sot-23; Channel Type Vishay | Mosfet, P-Ch, -20V, -5.3A, Sot-23; Transistor Polarity Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel; P-Channel | ||||
| Package Type | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT3; SOT23; SOT-23 | SOT23; TO-236-3, SC-59, SOT-23-3 | TO-3; SOT23 | TO-3; SOT23 | SOT23; TO-236-3, SC-59, SOT-23-3 | |
| V(BR)DSS | 20 volts | 20 volts | |||||
| PD | 960 to 1700 milliwatts | 960 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
